Tags: MOS capacitors

Description

The MOS capacitor consists of a Metal-Oxide-Semiconductor structure which has the semiconductor substrate with a thin oxide layer and a top metal contact, referred to as the gate. A second metal layer forms an Ohmic contact to the back of the semiconductor and is called the bulk contact.

Learn more about quantum dots from the many resources on this site, listed below. More information on MOS Capacitors can be found here.

All Categories (1-20 of 52)

  1. A Matlab 1D-Poisson-drift-diffusion simulator for semiconductor devices

    04 Mar 2024 | | Contributor(s):: Chien-Ting Tung

    A Matlab 1D-Poisson-Drift-Diffusion solver that can simulate basic semiconductor devies such as PN diode, Schottky diode, MOS capacitor... It solves Poisson-Drift-Diffusion with finite difference method, Slotboom variable, and Gummel iteration. I provide 4 examples: PN diode,...

  2. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor devices

  3. ABACUS MOS Capacitors (Spring 2022)

    04 May 2022 | | Contributor(s):: Gerhard Klimeck

    In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...

  4. ABACUS MOS Capacitors (Winter 2021)

    08 Dec 2021 | | Contributor(s):: Gerhard Klimeck

    In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...

  5. ABACUS Tool Suite and MOS Capacitors (Fall 2023)

    18 Oct 2023 | | Contributor(s):: Gerhard Klimeck

    In the sixth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip

  6. Band Structure Lab Demonstration: Bulk Strain

    03 Jun 2009 | | Contributor(s):: Gerhard Klimeck

    This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

  7. Chapter 1: A Primer MOSCap Tool on nanoHUB.org

    19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Shaikh S. Ahmed

    The primary reason to study MOS (metal-oxide-semiconductor) capacitors is to understand the principle of operation as well as become familiar with some of the routinely used characterization techniques for MOS field effect transistors (MOSFETs). The MOSCap tool on nanoHUB.org simulates the...

  8. CV profile with different oxide thickness

    20 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    C-V (or capacitance-voltage) profiling refers to a technique used for the characterization of semiconductor materials and devices. C-V testing is often used during the characterization process to determine semiconductor parameters, particularly in MOSCAP and MOSFET structures.C-V measurements can...

  9. CV-curves of a single-gate MOS capacitor

    Q&A|Closed | Responses: 10

    t is well known that the threshold voltage shift in the semiconductor is affected by the workfunction of the gate material. Namely VG = MS. For n+ and p+ polysilicon gates that difference is...

    https://nanohub.org/answers/question/2316

  10. ECE 606 L28.1: MOS Electrostatics and MOScap - Background

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  11. ECE 606 L28.2: MOScap - Band Diagram in Equilibrium and with Bias -->MOS cap

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  12. ECE 606 L28.3: MOScap - Qualitative Q-V Characteristics of MOS Capacitor

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  13. ECE 606 L28.4: MOScap - Induced Charges in Depletion and Inversion

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  14. ECE 606 L28.5: MOScap - Exact Solution of the Electrostatic Problem

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  15. ECE 606 L29.1: MOS Capacitor Signal Response - Introduction/Background

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  16. ECE 606 L29.2: MOS Capacitor Signal Response - Small Signal Response

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  17. ECE 606 L29.3: MOS Capacitor Signal Response - Large Signal Response

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  18. ECE 606 L31.1: MOSFET Non-Idealities - Flat Band Voltage - What Is It and How to Measure It?

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  19. ECE 606 L31.2: MOSFET Non-Idealities - Threshold Voltage Shift Due to Trapped Charges

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  20. ECE 606: Solid State Devices I

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

    This course provides the graduate-level introduction to understand, analyze, characterize and design the operation of semiconductor devices such as transistors, diodes, solar cells, light-emitting devices, and more.The material will primarily appeal to electrical engineering students whose...