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The MOS capacitor consists of a Metal-Oxide-Semiconductor structure which has the semiconductor substrate with a thin oxide layer and a top metal contact, referred to as the gate. A second metal layer forms an Ohmic contact to the back of the semiconductor and is called the bulk contact.
Learn more about quantum dots from the many resources on this site, listed below. More information on MOS Capacitors can be found here.
Schred: Exercise 1
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08 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the...
Schred: Exercise 3
This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description...
Exercise: CV curves for MOS capacitors
02 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also...
Illinois Tools: MOCA
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28 Mar 2007 | Tools | Contributor(s): Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park
A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures