
Schred: Exercise 1
08 Jul 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the...
http://nanohub.org/resources/4900

Schred: Exercise 3
08 Jul 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise examines the degradation of the total gate capacitance with technology generation due to MaxwellBoltzmann instead of FermiDirac statistics, quantummechanical charge description...
http://nanohub.org/resources/4904

Exercise: CV curves for MOS capacitors
02 Jul 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates to the students how the lowfrequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also...
http://nanohub.org/resources/4855

Illinois Tools: MOCA
28 Mar 2007  Tools  Contributor(s): Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeonghyun Park
A 2D Fullband Monte Carlo (MOCA) Simulation of SOI Device Structures
http://nanohub.org/resources/moca