
MOS Capacitors: Theory and Modeling
18 Jul 2008   Contributor(s):: Dragica Vasileska
These slides can help users acquire a basic understanding of MetalOxideSemiconductor (MOS) capacitors.

Schred: Exercise 1
06 Jul 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the carriers calculated semiclassically and quantummechanically is also examined since it is important...

Schred: Exercise 3
06 Jul 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise examines the degradation of the total gate capacitance with technology generation due to MaxwellBoltzmann instead of FermiDirac statistics, quantummechanical charge description and depletion of the polysilicon gates.www.eas.asu.edu/~vasileskNSF

Exercise: CV curves for MOS capacitors
02 Jul 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates to the students how the lowfrequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the highfrequency CV curves.NSFNSF

Illinois Tools: MOCA
28 Mar 2007   Contributor(s):: Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeonghyun Park
2D Fullband Monte Carlo (MOCA) Simulation for SOIBased Device Structures