Tags: MOS capacitors

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Description

The MOS capacitor consists of a Metal-Oxide-Semiconductor structure which has the semiconductor substrate with a thin oxide layer and a top metal contact, referred to as the gate. A second metal layer forms an Ohmic contact to the back of the semiconductor and is called the bulk contact.

Learn more about quantum dots from the many resources on this site, listed below. More information on MOS Capacitors can be found here.

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  1. ECE 612 Lecture 3: MOS Capacitors

    out of 5 stars 

    09 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

  2. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

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    16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor devices

  3. MOSCAP - Theoretical Exercises 3

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    02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

  4. MOSCAP - Theoretical Exercises 2

    out of 5 stars 

    02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

  5. MOSCAP - Theoretical Exercises 1

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    02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

  6. MOS Capacitors: Theory and Modeling

    out of 5 stars 

    18 Jul 2008 | | Contributor(s):: Dragica Vasileska

    These slides can help users acquire a basic understanding of Metal-Oxide-Semiconductor (MOS) capacitors.

  7. Schred: Exercise 1

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    06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the carriers calculated semi-classically and quantum-mechanically is also examined since it is important...

  8. Schred: Exercise 3

    out of 5 stars 

    06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description and depletion of the polysilicon gates. www.eas.asu.edu/~vasilesk NSF

  9. Exercise: CV curves for MOS capacitors

    out of 5 stars 

    02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF

  10. Illinois Tools: MOCA

    out of 5 stars 

    28 Mar 2007 | | Contributor(s):: Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park

    2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures

  11. MOS Capacitors: Description and Semiclassical Simulation With PADRE

    out of 5 stars 

    26 Jun 2006 | | Contributor(s):: Dragica Vasileska

    Introduction of Quantum-Mechanical Effects in Device Simulation

  12. MOSCap

    out of 5 stars 

    06 Apr 2006 | | Contributor(s):: Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska

    Capacitance of a MOS device