Tags: MOS capacitors

Description

The MOS capacitor consists of a Metal-Oxide-Semiconductor structure which has the semiconductor substrate with a thin oxide layer and a top metal contact, referred to as the gate. A second metal layer forms an Ohmic contact to the back of the semiconductor and is called the bulk contact.

Learn more about quantum dots from the many resources on this site, listed below. More information on MOS Capacitors can be found here.

All Categories (41-52 of 52)

  1. n-type and p-type biasing regions for MOS capacitors

    01 Nov 2018 | | Contributor(s):: Lawrence Norman LeBlanc

    This short tutorial illustrates the majority and minority charge carrier distributions in an MOS capacitor under three different biasing conditions: Accumulation, Depletion, and Inversion, for both n- and p-type structures and provides a simple mnemonic for the order of the biasing regions on a...

  2. Jan 26 2022

    nanoHUB Recitation Series for Semiconductor Education: MOS Capacitors

    Series Information: Recent economic needs have re-kindled national and global interest in semiconductor devices and created an urgent need for  more semiconductor device engineers and...

    https://nanohub.org/events/details/2119

  3. Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition

    24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun

    These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

  4. Quantum Bound States Exercise

    16 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

    Exercise BackgroundQuantum-mechanical systems (structures, devices) can be separated into open systems and closed systems. Open systems are characterized with propagating or current carrying states. Closed (or bound) systems are described with localized wave-functions. One such system is a...

  5. Sep 14 2023

    Recitation Series on nanoHUB Tools for Semiconductor Education: Session Four - ABACUS Tool Suite and MOS Capacitors

    We invite you to join the sixth session in our Recitation Series, nanoHUB Tools for Semiconductor Education.The objective of the recitation series is to enable faculty to enhance existing or...

    https://nanohub.org/events/details/2385

  6. SCALE Summer 2023 Research (ASU)

    19 Sep 2023 | | Contributor(s):: Esteban Chacon

  7. SCHRED Exercise: MOS Capacitor Analysis

    20 Jul 2010 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    The objective of this exercise is to examine the influence of semiclassical and quantum-mechanical charge description on the low-frequency CV-curves. It also teaches one the influence of poly-gate depletion on the low-frequency CV-curves.

  8. Schred: Exercise 1

    06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the carriers calculated semi-classically and quantum-mechanically is also examined since it is important...

  9. Schred: Exercise 3

    06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description and depletion of the polysilicon gates. www.eas.asu.edu/~vasilesk NSF

  10. Ubuntu based Interactive tool for the simulation of the MOS electrostatics

    26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work under...

  11. Windows based Interactive tool for the simulation of the MOS electrostatics

    26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...

  12. Windows based Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes

    26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...