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MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values
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05 Feb 2012 | Teaching Materials | Contributor(s): Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org …
MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)
MOScap’‘’‘MOScap’‘’‘MOScap’‘’‘MOScap’MOScap’‘’‘’‘’ MOSCap simula la …
06 Apr 2006 | Tools | Contributor(s): Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska
Capacitance of a MOS device
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