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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Questions & Answers (1-9 of 9) feed

  1. simulation does not give any result

    Closed | Responses: 0

    I simulated a n-type mosfet with following settings: device type mosfet n-type gaussian S/D doping density source/drain length: 50nm source/drain nodes: 15 channel length: 35 oxide …

    http://nanohub.org/answers/question/771

  2. How to see the occupation of electrons with strain

    Closed | Responses: 1

    How do I witness the variation of occupancies of electrons in the 6 conduction band minima's with the applied strain. Can anyone suggest me the good simulation tool for the same.

    http://nanohub.org/answers/question/675

  3. What are the emerging trends in device modeling

    Closed | Responses: 0

    What are the emerging trends in device modeling? We have attained sun 45nm regime. what is beyond this? what research can be done further? any idea

    http://nanohub.org/answers/question/565

  4. cylindrical geometry for mosfet in PADRE

    Closed | Responses: 1

    how to define a cylindrical geometry for mosfet in padre?

    http://nanohub.org/answers/question/422

  5. relation between the si thickness and current

    Open | Responses: 1

    i have a question about role of the si thickness in computing of the current. in ultra,thin body mosfet, what relation is there between the si thickness and current?

    http://nanohub.org/answers/question/272

  6. How do I derive the 2D electron density used in nano MOSFET calculations?

    Open | Responses: 1

    In nanomos-2.5, the density of charge is obtained by multiplying the square of the wavefunction by a prefactor: with semiclassical method, that prefactor is given by …

    http://nanohub.org/answers/question/54

  7. Is there any free licence drift diffusion device simulator that supports MOS and bipolar devices

    Open | Responses: 1

    A sequel to this question is : Is Bambi simulator still available ??

    http://nanohub.org/answers/question/39

  8. Numerical work outs surface potential and capacitance of Mosfets in Matlab

    Open | Responses: 1

    how to work out surface potential and capacitance for Mosfets numerically in matlab?

    http://nanohub.org/answers/question/36

  9. transfer characteristic

    Open | Responses: 2

    how the transfer characteristic of a mosfet depends on the channel doping?(theory)

    http://nanohub.org/answers/question/31

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