
Convergence problem, take smaller steps
Closed  Responses: 0
I receive this error when running the MOSFET tool. Any one can suggest a solution
http://nanohub.org/answers/question/1488

cylindrical geometry for mosfet in PADRE
Closed  Responses: 1
how to define a cylindrical geometry for mosfet in padre?
http://nanohub.org/answers/question/422

How do I derive the 2D electron density used in nano MOSFET calculations?
Open  Responses: 1
In nanomos2.5, the density of charge is obtained by multiplying the square of the wavefunction by a prefactor: with semiclassical method, that prefactor is given by
http://nanohub.org/answers/question/54

How to see the occupation of electrons with strain
Closed  Responses: 1
How do I witness the variation of occupancies of electrons in the 6 conduction band minima’s with the applied strain. Can anyone suggest me the good simulation tool for the same.
http://nanohub.org/answers/question/675

Is there any free licence drift diffusion device simulator that supports MOS and bipolar devices
Open  Responses: 1
A sequel to this question is : Is Bambi simulator still available ??
http://nanohub.org/answers/question/39

Models for SETs in PSpice
Closed  Responses: 0
Hello. I am trying to simulate hybrid circuits (cMOS SET transistors) and I can't find models for SET, anywhere... I only want a SET that can simulate properly along with regular...
http://nanohub.org/answers/question/1399

Numerical work outs surface potential and capacitance of Mosfets in Matlab
Open  Responses: 1
how to work out surface potential and capacitance for Mosfets numerically in matlab?
http://nanohub.org/answers/question/36

relation between the si thickness and current
Open  Responses: 1
i have a question about role of the si thickness in computing of the current. in ultra,thin body mosfet, what relation is there between the si thickness and current?
http://nanohub.org/answers/question/272

simulation does not give any result
Closed  Responses: 0
I simulated a ntype mosfet with following settings:
device type mosfet ntype
gaussian S/D doping density
source/drain length: 50nm
source/drain nodes: 15
channel length: 35 http://nanohub.org/answers/question/771

transfer characteristic
Open  Responses: 2
how the transfer characteristic of a mosfet depends on the channel doping?(theory)
http://nanohub.org/answers/question/31

What are the emerging trends in device modeling
Closed  Responses: 0
What are the emerging trends in device modeling? We have attained sun 45nm regime. what is beyond this? what research can be done further? any idea
http://nanohub.org/answers/question/565