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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Online Presentations (1-20 of 39) feed

  1. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

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    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has …

    http://nanohub.org/resources/13611

  2. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

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    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has …

    http://nanohub.org/resources/13612

  3. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

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    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    …

    http://nanohub.org/resources/13614

  4. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

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    11 May 2011 | Online Presentations | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years …

    http://nanohub.org/resources/11249

  5. Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

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    22 Sep 2010 | Online Presentations | Contributor(s): Krishna Shenai

    This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging …

    http://nanohub.org/resources/9343

  6. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

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    05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors.. Learning Objectives: GNR TFET Simulation pz Tight-Binding Orbital Model 3D …

    http://nanohub.org/resources/9283

  7. Lecture 1b: Nanotransistors - A Bottom Up View

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    20 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom

    MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for …

    http://nanohub.org/resources/9344

  8. Illinois ECE 440 Solid State Electronic Devices, Lecture 34: MOS Field Effect Transistor (FET)

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    …

    http://nanohub.org/resources/8553

  9. Illinois ECE 440 Solid State Electronic Devices, Lecture 35: Short Channel MOSFET and Non-Ideal Behavior

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    …

    http://nanohub.org/resources/8557

  10. Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    …

    http://nanohub.org/resources/8561

  11. Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    …

    http://nanohub.org/resources/8564

  12. Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    …

    http://nanohub.org/resources/8570

  13. ECE 606 Lecture 38: Modern MOSFET

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    07 May 2009 | Online Presentations | Contributor(s): Muhammad Alam

    http://nanohub.org/resources/5906

  14. ECE 606 Lecture 40: Looking Back and Looking Forward

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    30 Apr 2009 | Online Presentations

    http://nanohub.org/resources/6716

  15. ECE 606 Lecture 37b: Nonideal Effects in MOSFET II

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    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5826

  16. ECE 606 Lecture 36: MOSFET I-V Characteristics II

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    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad Alam

    http://nanohub.org/resources/5902

  17. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

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    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5904

  18. ECE 606 Lecture 35: MOSFET I-V Characteristics I

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    16 Apr 2009 | Online Presentations | Contributor(s): Muhammad Alam

    http://nanohub.org/resources/5900

  19. ECE 612 Lecture 26: Heterostructure FETs

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    10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Introduction, 2) Heterojunction review, 3) Modulation doping, 4) I-V characteristics, 5) Device Structure / Materials, 6) Summary.

    http://nanohub.org/resources/6032

  20. ECE 612 Lecture 18B: CMOS Process Flow

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    18 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf. This lecture is a condensed version of the more complete presentation …

    http://nanohub.org/resources/5855

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