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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Online Presentations (1-20 of 46)

  1. ECE 695A Lecture 9R: Review Questions

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    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Does NBTI power-exponent depend on voltage or temperature? Do you expect the NBTI power-exponent to be larger or smaller if trapping is important? How does one know that the …

    https://nanohub.org/resources/16778

  2. ECE 606 Lecture 27: Looking Back and Looking Forward

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    20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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    https://nanohub.org/resources/16122

  3. ECE 606 Lecture 25: Modern MOSFETs

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    03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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    https://nanohub.org/resources/16055

  4. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

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    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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    https://nanohub.org/resources/15977

  5. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

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    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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    https://nanohub.org/resources/15978

  6. ECE 606 Lecture 24: MOSFET Non-Idealities

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    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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    https://nanohub.org/resources/15979

  7. Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities

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    19 Jul 2012 | Online Presentations | Contributor(s): Mark Lundstrom

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    https://nanohub.org/resources/14772

  8. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

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    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has …

    https://nanohub.org/resources/13611

  9. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

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    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has …

    https://nanohub.org/resources/13612

  10. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

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    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

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    https://nanohub.org/resources/13614

  11. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

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    11 May 2011 | Online Presentations | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years …

    https://nanohub.org/resources/11249

  12. Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

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    22 Sep 2010 | Online Presentations | Contributor(s): Krishna Shenai

    This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging …

    https://nanohub.org/resources/9343

  13. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

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    05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors.. Learning Objectives: GNR TFET Simulation pz Tight-Binding Orbital Model 3D …

    https://nanohub.org/resources/9283

  14. Lecture 1b: Nanotransistors - A Bottom Up View

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    20 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom

    MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for …

    https://nanohub.org/resources/9344

  15. Illinois ECE 440 Solid State Electronic Devices, Lecture 34: MOS Field Effect Transistor (FET)

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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    https://nanohub.org/resources/8553

  16. Illinois ECE 440 Solid State Electronic Devices, Lecture 35: Short Channel MOSFET and Non-Ideal Behavior

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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    https://nanohub.org/resources/8557

  17. Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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    https://nanohub.org/resources/8561

  18. Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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    https://nanohub.org/resources/8564

  19. Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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    https://nanohub.org/resources/8570

  20. ECE 606 Lecture 38: Modern MOSFET

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    07 May 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/5906

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