Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter
02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop
Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
ECE 606 Lecture 38: Modern MOSFET
0.0 out of 5 stars
07 May 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
ECE 606 Lecture 40: Looking Back and Looking Forward
30 Apr 2009 | Online Presentations
ECE 606 Lecture 37b: Nonideal Effects in MOSFET II
28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
ECE 606 Lecture 36: MOSFET I-V Characteristics II
ECE 606 Lecture 37a: Nonideal Effects in MOSFET I
ECE 606 Lecture 35: MOSFET I-V Characteristics I
16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
2) Heterojunction review,
3) Modulation doping,
4) I-V characteristics,
5) Device Structure / Materials,
ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.
This lecture is a condensed version of the more complete...
ECE 612 Lecture 18A: CMOS Process Steps
12 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Unit Process Operations,
2) Process Variations.
ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review and introduction,
2) Scattering theory of the MOSFET,
3) Transmission under low VDS,
4) Transmission under high VDS,
ECE 612 Lecture 7: Scattering Theory of the MOSFET I
29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally...
Lecture 3A: The Ballistic MOSFET
10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...
Lecture 3B: The Ballistic MOSFET
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our...
Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent...
Lecture 4: Scattering in Nanoscale MOSFETs
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...