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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015 | | Contributor(s):: Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...
CMOS-Nano Hybrid Technology: a nanoFPGA-related study
out of 5 stars
04 Apr 2007 | | Contributor(s):: Wei Wang
Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the Department of Electrical and Computer Engineering, the University of Western Ontario, London, ON, Canada....
ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
26 Nov 2012 | | Contributor(s):: Gerhard Klimeck
ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities
ECE 606 Lecture 24: MOSFET Non-Idealities
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | | Contributor(s):: Gerhard Klimeck
ECE 606 Lecture 27: Looking Back and Looking Forward
20 Dec 2012 | | Contributor(s):: Gerhard Klimeck
ECE 606 Lecture 35: MOSFET I-V Characteristics I
16 Apr 2009 | | Contributor(s):: Muhammad A. Alam
ECE 606 Lecture 36: MOSFET I-V Characteristics II
28 Apr 2009 | | Contributor(s):: Muhammad A. Alam
ECE 606 Lecture 37a: Nonideal Effects in MOSFET I
ECE 606 Lecture 37b: Nonideal Effects in MOSFET II
ECE 606 Lecture 38: Modern MOSFET
07 May 2009 | | Contributor(s):: Muhammad A. Alam
ECE 606 Lecture 40: Looking Back and Looking Forward
30 Apr 2009 |
ECE 612 Lecture 18A: CMOS Process Steps
12 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Unit Process Operations,2) Process Variations.
ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008 | | Contributor(s):: Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.
ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.
ECE 612 Lecture 7: Scattering Theory of the MOSFET I
08 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.
ECE 612 Lecture 8: Scattering Theory of the MOSFET II
ECE 695A Lecture 9R: Review Questions
08 Feb 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Does NBTI power-exponent depend on voltage or temperature?Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the time-exponent different for a surround gate MOSFET vs. planar...
Electronics From the Bottom Up: top-down/bottom-up views of length
17 Aug 2007 | | Contributor(s):: Muhammad A. Alam
When devices get small stochastic effects become important. Random dopant effects lead to uncertainties in a MOSFET’s threshold voltage and gate oxides breakdown is a random process. Even a concept as simple as “channel length” becomes uncertain. This short (20 min) talk, a footnote to the...