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Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Resources (1-20 of 108)

  1. CMOS-Nano Hybrid Technology: a nanoFPGA-related study

    04 Apr 2007 | Online Presentations | Contributor(s): Wei Wang

    Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the...

    http://nanohub.org/resources/2567

  2. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15977

  3. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15978

  4. ECE 606 Lecture 24: MOSFET Non-Idealities

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15979

  5. ECE 606 Lecture 25: Modern MOSFETs

    03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/16055

  6. ECE 606 Lecture 27: Looking Back and Looking Forward

    20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/16122

  7. ECE 606 Lecture 35: MOSFET I-V Characteristics I

    16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5900

  8. ECE 606 Lecture 36: MOSFET I-V Characteristics II

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5902

  9. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5904

  10. ECE 606 Lecture 37b: Nonideal Effects in MOSFET II

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5826

  11. ECE 606 Lecture 38: Modern MOSFET

    07 May 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5906

  12. ECE 606 Lecture 40: Looking Back and Looking Forward

    30 Apr 2009 | Online Presentations

    http://nanohub.org/resources/6716

  13. ECE 612 Lecture 18A: CMOS Process Steps

    12 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Unit Process Operations, 2) Process Variations.

    http://nanohub.org/resources/5788

  14. ECE 612 Lecture 18B: CMOS Process Flow

    18 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf. This lecture is a condensed version of the more complete...

    http://nanohub.org/resources/5855

  15. ECE 612 Lecture 26: Heterostructure FETs

    10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Introduction, 2) Heterojunction review, 3) Modulation doping, 4) I-V characteristics, 5) Device Structure / Materials, 6) Summary.

    http://nanohub.org/resources/6032

  16. ECE 612 Lecture 7: Scattering Theory of the MOSFET I

    08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

    http://nanohub.org/resources/5367

  17. ECE 612 Lecture 8: Scattering Theory of the MOSFET II

    08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

    http://nanohub.org/resources/5368

  18. ECE 695A Lecture 9R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Does NBTI power-exponent depend on voltage or temperature? Do you expect the NBTI power-exponent to be larger or smaller if trapping is important? How does one know that...

    http://nanohub.org/resources/16778

  19. Electronics From the Bottom Up: top-down/bottom-up views of length

    17 Aug 2007 | Online Presentations | Contributor(s): Muhammad A. Alam

    When devices get small stochastic effects become important. Random dopant effects lead to uncertainties in a MOSFET’s threshold voltage and gate oxides breakdown is a random process. Even...

    http://nanohub.org/resources/2974

  20. Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap?

    20 Apr 2004 | Online Presentations | Contributor(s): Jerry M. Woodall

    Strained Si and SiGe MOSFET technologies face fundamental limits towards the end of this decade when the technology roadmap calls for gate dimensions of 45 nm headed for 22 nm. This fact, and...

    http://nanohub.org/resources/163

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