
IIIV Nanoscale MOSFETS: Physics, Modeling, and Design
28 Jun 2013   Contributor(s):: Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which IIIV compound semiconductorbased...

Device Physics Studies of IIIV and Silicon MOSFETS for Digital Logic
28 Jun 2013   Contributor(s):: Himadri Pal
IIIV's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before IIIV's can replace silicon (Si) in extremely scaled devices. The effect of low densityofstates of IIIV...

Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013   Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and IIIV semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high# dielectrics,...

Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013   Contributor(s):: Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

TwoDimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013   Contributor(s):: Carl R. Huster
For many years now, solid state device simulators have been based on the driftdiffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013   Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

Simulation of highly idealized, atomic scale MQCA logic circuits
15 Nov 2007   Contributor(s):: Dmitri Nikonov, George Bourianoff
Spintronics logic devices based on majority gates formed by atomiclevel arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by timedependent solution of the densitymatrix equation with relaxation. The devices are shown to satisfy requirements for...

Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006   Contributor(s)::
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer...

nanoMOS 2.0: A Two Dimensional Simulator for Quantum Transport in DoubleGate MOSFETs
06 Oct 2006   Contributor(s):: Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of socalled Büttiker probes. The double gate device geometry permits an efficient mode space approach that...