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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Publications (1-3 of 3) feed

  1. Simulation of highly idealized, atomic scale MQCA logic circuits

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    15 Nov 2007 | Publications | Contributor(s): Dmitri Nikonov, George Bourianoff

    Spintronics logic devices based on majority gates formed by atomic-level arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by time-dependent solution of …

    http://nanohub.org/resources/3527

  2. Nanoscale MOSFETs: Physics, Simulation and Design

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    26 Oct 2006 | Publications | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of …

    http://nanohub.org/resources/1917

  3. nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

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    06 Oct 2006 | Publications | Contributor(s): Zhibin Ren, ramesh venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

    A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of …

    http://nanohub.org/resources/1875

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