nanoHUB.org - Tags: MOSFET: resources
http://nanohub.org/tags/
Tue, 02 Sep 2014 01:00:57 -0400HUBzero - The open source platform for scientific and educational collaborationen-gbCopyright 2014 nanoHUB.orgTagsNegative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
http://nanohub.org/resources/13613
http://nanohub.org/resources/13613This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...]]>6Thu, 29 Mar 2012 03:13:13 -0400Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)
http://nanohub.org/resources/13614
http://nanohub.org/resources/13614]]>1Thu, 29 Mar 2012 03:13:13 -0400MOSFET Design Simulation I
http://nanohub.org/resources/13398
http://nanohub.org/resources/13398A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...]]>39Thu, 08 Mar 2012 03:23:27 -0500MOSFET Design Simulation I (Instructor Copy)
http://nanohub.org/resources/13400
http://nanohub.org/resources/1340039Thu, 08 Mar 2012 03:23:24 -0500MOSFET Design Calculations - Step 2 (Instructor Copy)
http://nanohub.org/resources/13360
http://nanohub.org/resources/1336039Mon, 05 Mar 2012 20:31:16 -0500MOSFET Design Calculations - Step 2
http://nanohub.org/resources/13358
http://nanohub.org/resources/1335839Mon, 05 Mar 2012 20:31:15 -0500Silvaco Athena - Part 3
http://nanohub.org/resources/11819
http://nanohub.org/resources/11819This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.]]>39Tue, 09 Aug 2011 15:29:21 -0400MOSFET Lab Exercise: Series Resistance and Transistor Breakdown
http://nanohub.org/resources/11650
http://nanohub.org/resources/11650This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how to simulate MOSFET operation near transistor breakdown.]]>39Wed, 13 Jul 2011 20:19:26 -0400Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
http://nanohub.org/resources/11249
http://nanohub.org/resources/11249This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...]]>1Wed, 11 May 2011 19:10:49 -0400FETToy
http://nanohub.org/resources/fettoy
http://nanohub.org/resources/fettoyFETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs,FETToy assumes either a single or double gate geometry and for a nanowire and nanotube...]]>7Wed, 23 Feb 2011 17:54:05 -0500OMEN Nanowire Homework Problems
http://nanohub.org/resources/10512
http://nanohub.org/resources/10512OMEN Nanowire homework problems: anyone who has gone through The First-Time User Guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.]]>39Mon, 24 Jan 2011 18:44:20 -0500MOSFET Lab - Scaling
http://nanohub.org/resources/10268
http://nanohub.org/resources/10268The concept of device scaling and the need to control short channel effects is used in this real life problem]]>39Mon, 03 Jan 2011 13:55:14 -0500MOSFET Design Calculations - Step 1
http://nanohub.org/resources/10245
http://nanohub.org/resources/1024539Sun, 02 Jan 2011 10:49:24 -0500MOSFET Design Calculations - Step 1 (Instructor Copy)
http://nanohub.org/resources/10252
http://nanohub.org/resources/1025239Sun, 02 Jan 2011 10:49:24 -0500MOSFET Design Calculations - Step 2
http://nanohub.org/resources/10258
http://nanohub.org/resources/1025839Sun, 02 Jan 2011 10:49:24 -0500MOSFET Design Calculations - Step 2 (Instructor Copy)
http://nanohub.org/resources/10260
http://nanohub.org/resources/1026039Sun, 02 Jan 2011 10:49:24 -0500MOSFET Worked out problems 1
http://nanohub.org/resources/10128
http://nanohub.org/resources/10128Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.]]>39Mon, 06 Dec 2010 19:20:59 -0500A methodology for SPICE-compatible modeling of nanoMOSFETs
http://nanohub.org/resources/10024
http://nanohub.org/resources/10024 An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his...]]>39Wed, 17 Nov 2010 21:28:06 -0500ABACUS: Test for MOSFET Tool
http://nanohub.org/resources/9882
http://nanohub.org/resources/9882The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...]]>39Mon, 18 Oct 2010 18:23:41 -0400Verification of the Validity of the MOSFET Tool
http://nanohub.org/resources/9841
http://nanohub.org/resources/9841Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the analytical model. MATLAB script used for verification is also available for download.]]>39Mon, 11 Oct 2010 18:01:56 -0400