The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Resources (1-20 of 110)

  1. MATLAB: Negative Capacitance (NC) FET Model

    05 Dec 2015 | | Contributor(s):: Muhammad Abdul Wahab, Muhammad A. Alam

    MATLAB model that calculates the Q-V, C-V, and I-V characteristics of the conventional MOSFET and NC-FET.

  2. A Tutorial Introduction to Negative-­Capacitor Landau Transistors: Perspectives on the Road Ahead

    04 Dec 2015 | | Contributor(s):: Muhammad A. Alam

    In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...

  3. Green Light on Germanium

    02 Nov 2015 | | Contributor(s):: peide ye

    This talk will review recent progress as well as challenges on Ge research for future logic applications with emphasis on the breakthrough work at Purdue University on Ge nFET which leads to the demonstration of the world first Ge CMOS circuits on Si substrates. Ge device technology includes...

  4. MOSFET Simulation

    04 Oct 2013 | | Contributor(s):: Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan

    Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

  5. Tunnel FETs - Device Physics and Realizations

    27 Jun 2013 | | Contributor(s):: Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

  6. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    25 Jun 2013 | | Contributor(s):: Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...

  7. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    25 Jun 2013 | | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V...

  8. Exploring New Channel Materials for Nanoscale CMOS

    27 Jun 2013 | | Contributor(s):: Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics,...

  9. Nanoscale MOSFETS: Physics, Simulation and Design

    27 Jun 2013 | | Contributor(s):: Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

  10. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    27 Jun 2013 | | Contributor(s):: Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

  11. Computational and Experimental Study of Transport in Advanced Silicon Devices

    27 Jun 2013 | | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  12. ECE 695A Lecture 9R: Review Questions

    07 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Does NBTI power-exponent depend on voltage or temperature?Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the time-exponent different for a surround gate MOSFET vs. planar...

  13. ECE 606 Lecture 27: Looking Back and Looking Forward

    20 Dec 2012 | | Contributor(s):: Gerhard Klimeck

  14. ECE 606 Lecture 25: Modern MOSFETs

    03 Dec 2012 | | Contributor(s):: Gerhard Klimeck

  15. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  16. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  17. ECE 606 Lecture 24: MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  18. MIT Virtual-Source Tool

    07 Aug 2012 | | Contributor(s):: Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom

    Virtual Source Model for MOSFET compact modeling

  19. Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities

    19 Jul 2012 | | Contributor(s):: Mark Lundstrom

  20. MOSFET Design Calculations - Step 3

    01 Apr 2012 | | Contributor(s):: Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...