
MOSFET Simulation
04 Oct 2013  Tools  Contributor(s): Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan
Displays drain current as a function of sourcedrain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an ntype MOSFET.
http://nanohub.org/resources/mosfetsat

Tunnel FETs  Device Physics and Realizations
10 Jul 2013  Online Presentations  Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...
http://nanohub.org/resources/18723

IIIV Nanoscale MOSFETS: Physics, Modeling, and Design
28 Jun 2013  Papers  Contributor(s): Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...
http://nanohub.org/resources/18694

Device Physics Studies of IIIV and Silicon MOSFETS for Digital Logic
28 Jun 2013  Papers  Contributor(s): Himadri Pal
IIIV's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before IIIV's can...
http://nanohub.org/resources/18697

Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013  Papers  Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and IIIV semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
http://nanohub.org/resources/18738

Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013  Papers  Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...
http://nanohub.org/resources/18763

TwoDimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013  Papers  Contributor(s): Carl R. Huster
For many years now, solid state device simulators have been based on the driftdiffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...
http://nanohub.org/resources/18765

Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013  Papers  Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
http://nanohub.org/resources/18769

ECE 695A Lecture 9R: Review Questions
08 Feb 2013  Online Presentations  Contributor(s): Muhammad Alam
Review Questions:
Does NBTI powerexponent depend on voltage or temperature?
Do you expect the NBTI powerexponent to be larger or smaller if trapping is important?
How does one know that...
http://nanohub.org/resources/16778

ECE 606 Lecture 27: Looking Back and Looking Forward
20 Dec 2012  Online Presentations  Contributor(s): Gerhard Klimeck
http://nanohub.org/resources/16122

ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012  Online Presentations  Contributor(s): Gerhard Klimeck
http://nanohub.org/resources/16055

ECE 606 Lecture 22: MOScap Frequence Response/MOSFET IV Characteristics
26 Nov 2012  Online Presentations  Contributor(s): Gerhard Klimeck
http://nanohub.org/resources/15977

ECE 606 Lecture 23: MOSFET IV Characteristics/MOSFET NonIdealities
26 Nov 2012  Online Presentations  Contributor(s): Gerhard Klimeck
http://nanohub.org/resources/15978

ECE 606 Lecture 24: MOSFET NonIdealities
26 Nov 2012  Online Presentations  Contributor(s): Gerhard Klimeck
http://nanohub.org/resources/15979

MIT VirtualSource Tool
07 Aug 2012  Tools  Contributor(s): Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom
Virtual Source Model for MOSFET compact modeling
http://nanohub.org/resources/vsmod

Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities
19 Jul 2012  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/14772

MOSFET Design Calculations  Step 3
01 Apr 2012  Teaching Materials  Contributor(s): Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...
http://nanohub.org/resources/13675

MOSFET Design Calculations  Step 3 (Instructor Copy)
01 Apr 2012  Teaching Materials  Contributor(s): Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...
http://nanohub.org/resources/13677

Negative Bias Temperature Instability (NBTI) in pMOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
28 Mar 2012  Online Presentations  Contributor(s): Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it...
http://nanohub.org/resources/13611

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Predictive Modeling (Part 3 of 3)
28 Mar 2012  Online Presentations  Contributor(s): Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...
http://nanohub.org/resources/13612