Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

11 May 2011 | Online Presentations | Contributor(s): Souvik Mahapatra

This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years …

https://nanohub.org/resources/11249

FETToy

14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

https://nanohub.org/resources/fettoy

OMEN Nanowire Homework Problems

23 Jan 2011 | Teaching Materials | Contributor(s): SungGeun Kim

OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework …

https://nanohub.org/resources/10512

MOSFET Lab - Scaling

02 Jan 2011 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

The concept of device scaling and the need to control short channel effects is used in this real life problem

https://nanohub.org/resources/10268

MOSFET Design Calculations - Step 1

30 Dec 2010 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …

https://nanohub.org/resources/10245

MOSFET Design Calculations - Step 1 (Instructor Copy)

30 Dec 2010 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …

https://nanohub.org/resources/10252

MOSFET Design Calculations - Step 2

31 Dec 2010 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …

https://nanohub.org/resources/10258

MOSFET Design Calculations - Step 2 (Instructor Copy)

31 Dec 2010 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …

https://nanohub.org/resources/10260

MOSFET Worked out problems 1

06 Dec 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

https://nanohub.org/resources/10128

A methodology for SPICE-compatible modeling of nanoMOSFETs

17 Nov 2010 | Teaching Materials | Contributor(s): Alba Graciela Avila, David Espejo

An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), …

https://nanohub.org/resources/10024

ABACUS: Test for MOSFET Tool

17 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have …

https://nanohub.org/resources/9882

Verification of the Validity of the MOSFET Tool

10 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the …

https://nanohub.org/resources/9841

Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

19 Jul 2010 | Online Presentations | Contributor(s): Krishna Shenai

This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging …

https://nanohub.org/resources/9343

Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

08 Jul 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier

This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors.. Learning Objectives: GNR TFET Simulation pz Tight-Binding Orbital Model 3D …

https://nanohub.org/resources/9283

Lecture 1b: Nanotransistors - A Bottom Up View

19 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom

MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for …

https://nanohub.org/resources/9344

Atomistic Simulations of Reliability

01 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently …

https://nanohub.org/resources/9253

Exercise for MOSFET Lab: Device Scaling

23 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This exercise explores device scaling and how well devices are designed.

https://nanohub.org/resources/9221

Threshold voltage in a nanowire MOSFET

09 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck

Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface between …

https://nanohub.org/resources/8803

Illinois ECE 440 Solid State Electronic Devices, Lecture 34: MOS Field Effect Transistor (FET)

01 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

…

https://nanohub.org/resources/8553

Illinois ECE 440 Solid State Electronic Devices, Lecture 35: Short Channel MOSFET and Non-Ideal Behavior

01 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

…

https://nanohub.org/resources/8557