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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Resources (41-60 of 100)

  1. Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    …

    https://nanohub.org/resources/8561

  2. Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter

    This resource has a 5.6 Ranking

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    …

    https://nanohub.org/resources/8564

  3. Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    …

    https://nanohub.org/resources/8570

  4. Illinois ECE 440: MOS Field-Effect Transistor Homework

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    28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed

    This homework covers Output Characteristics and Mobility Model of MOSFETs.

    https://nanohub.org/resources/8268

  5. Tutorial for PADRE Based Simulation Tools

    This resource has a 8.8 Ranking

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    10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to …

    https://nanohub.org/resources/7223

  6. Exercise for MOSFET Lab: Long Channel vs. Short Channel Device

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    03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska

    In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts to …

    https://nanohub.org/resources/7188

  7. Exercise for MOSFET Lab: DIBL Effect

    This resource has a 7.1 Ranking

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    03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.

    https://nanohub.org/resources/7190

  8. MOSFet: First-Time User Guide

    This resource has a 10.0 Ranking

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    13 Jun 2009 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Benjamin P Haley

    This first-time user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOI-MOSFETs is followed by a tour of the Rappture interface, which notes key inputs and …

    https://nanohub.org/resources/6900

  9. Band Structure Lab Demonstration: Bulk Strain

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    12 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck

    This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

    https://nanohub.org/resources/6815

  10. MOSFet Demonstration: MOSFET Device Simulation and Analysis

    This resource has a 9.3 Ranking

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    11 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck, Benjamin P Haley

    This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.

    https://nanohub.org/resources/6830

  11. ECE 539 Report: Study of two-dimensional Shrodinger-Poisson Solver

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    01 Jun 2009 | Downloads | Contributor(s): Fawad Hassan

    We solve the 2-Dimensional Shrodinger-Poisson system of equations using a self consistent scheme (like Gummel Iteration). We study a double gate Silicon Mosfet oriented in the 100 direction using the …

    https://nanohub.org/resources/6776

  12. ECE 606 Lecture 38: Modern MOSFET

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    07 May 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/5906

  13. ECE 606 Lecture 40: Looking Back and Looking Forward

    This resource has a 8.6 Ranking

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    30 Apr 2009 | Online Presentations

    https://nanohub.org/resources/6716

  14. ECE 606 Lecture 37b: Nonideal Effects in MOSFET II

    This resource has a 9.3 Ranking

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    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/5826

  15. ECE 606 Lecture 36: MOSFET I-V Characteristics II

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    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/5902

  16. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

    This resource has a 9.0 Ranking

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    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/5904

  17. ECE 606 Lecture 35: MOSFET I-V Characteristics I

    This resource has a 9.7 Ranking

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    16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/5900

  18. MOSCap: First-Time User Guide

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    30 Mar 2009 | Teaching Materials | Contributor(s): SungGeun Kim, Benjamin P Haley, Gerhard Klimeck

    This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate …

    https://nanohub.org/resources/6546

  19. OMEN Nanowire

    This resource has a 10.0 Ranking

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    02 Sep 2008 | Tools | Contributor(s): SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck

    Full-band 3D quantum transport simulation in nanowire structure

    https://nanohub.org/resources/omenwire

  20. ECE 612 Lecture 26: Heterostructure FETs

    This resource has a 8.8 Ranking

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    10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Introduction, 2) Heterojunction review, 3) Modulation doping, 4) I-V characteristics, 5) Device Structure / Materials, 6) Summary.

    https://nanohub.org/resources/6032

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