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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits
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02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop
Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter
Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
Illinois ECE 440: MOS Field-Effect Transistor Homework
28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed
This homework covers Output Characteristics and Mobility Model of MOSFETs.
Tutorial for PADRE Based Simulation Tools
10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to …
Exercise for MOSFET Lab: Long Channel vs. Short Channel Device
03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska
In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts to …
Exercise for MOSFET Lab: DIBL Effect
03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.
MOSFet: First-Time User Guide
13 Jun 2009 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Benjamin P Haley
This first-time user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOI-MOSFETs is followed by a tour of the Rappture interface, which notes key inputs and …
Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
MOSFet Demonstration: MOSFET Device Simulation and Analysis
11 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.
ECE 539 Report: Study of two-dimensional Shrodinger-Poisson Solver
01 Jun 2009 | Downloads | Contributor(s): Fawad Hassan
We solve the 2-Dimensional Shrodinger-Poisson system of equations using a self consistent scheme (like Gummel Iteration). We study a double gate Silicon Mosfet oriented in the 100 direction using the …
ECE 606 Lecture 38: Modern MOSFET
07 May 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
ECE 606 Lecture 40: Looking Back and Looking Forward
30 Apr 2009 | Online Presentations
ECE 606 Lecture 37b: Nonideal Effects in MOSFET II
28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
ECE 606 Lecture 36: MOSFET I-V Characteristics II
ECE 606 Lecture 37a: Nonideal Effects in MOSFET I
ECE 606 Lecture 35: MOSFET I-V Characteristics I
16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
MOSCap: First-Time User Guide
30 Mar 2009 | Teaching Materials | Contributor(s): SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate …
02 Sep 2008 | Tools | Contributor(s): SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck
Full-band 3D quantum transport simulation in nanowire structure
ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Introduction, 2) Heterojunction review, 3) Modulation doping, 4) I-V characteristics, 5) Device Structure / Materials, 6) Summary.
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