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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Resources (61-80 of 100)

  1. ECE 612 Lecture 18B: CMOS Process Flow

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    18 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf. This lecture is a condensed version of the more complete presentation …

    https://nanohub.org/resources/5855

  2. ECE 612 Lecture 18A: CMOS Process Steps

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    12 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Unit Process Operations, 2) Process Variations.

    https://nanohub.org/resources/5788

  3. ECE 612 Lecture 8: Scattering Theory of the MOSFET II

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    08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

    https://nanohub.org/resources/5368

  4. ECE 612 Lecture 7: Scattering Theory of the MOSFET I

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    08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

    https://nanohub.org/resources/5367

  5. Introductory Comments

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    29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/5502

  6. Lecture 7: Connection to the Bottom Up Approach

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    23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally …

    https://nanohub.org/resources/5314

  7. Lecture 3A: The Ballistic MOSFET

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    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics …

    https://nanohub.org/resources/5309

  8. Lecture 3B: The Ballistic MOSFET

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    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

    https://nanohub.org/resources/5310

  9. Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up

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    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional …

    https://nanohub.org/resources/5207

  10. Lecture 2: Elementary Theory of the Nanoscale MOSFET

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    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent …

    https://nanohub.org/resources/5308

  11. Lecture 4: Scattering in Nanoscale MOSFETs

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    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in …

    https://nanohub.org/resources/5311

  12. Lecture 5: Application to State-of-the-Art FETs

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    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the …

    https://nanohub.org/resources/5312

  13. Introduction: Physics of Nanoscale MOSFETs

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    26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation

    https://nanohub.org/resources/5317

  14. 2008 NCN@Purdue Summer School: Electronics from the Bottom Up

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    26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom

    Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic …

    https://nanohub.org/resources/5305

  15. Physics of Nanoscale MOSFETs

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    26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of …

    https://nanohub.org/resources/5306

  16. Lecture 1: Review of MOSFET Fundamentals

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    26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the …

    https://nanohub.org/resources/5307

  17. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

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    16 Jul 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor device education

    https://nanohub.org/resources/abacus

  18. MOSFET - Theoretical Exercises

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    03 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    www.eas.asu.edu/~vasileskNSF

    https://nanohub.org/resources/5191

  19. MOSFET Exercise

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    07 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias …

    https://nanohub.org/resources/4906

  20. MOSfet Homework Assignment - Role of Dielectric Constant and Thickness

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    31 Jan 2008 | Teaching Materials | Contributor(s): David K. Ferry

    Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters: Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes), poly-Si gate, junction depth of …

    https://nanohub.org/resources/3948

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