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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
ECE 612 Lecture 18B: CMOS Process Flow
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18 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf. This lecture is a condensed version of the more complete presentation …
ECE 612 Lecture 18A: CMOS Process Steps
12 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Unit Process Operations, 2) Process Variations.
ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.
ECE 612 Lecture 7: Scattering Theory of the MOSFET I
29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally …
Lecture 3A: The Ballistic MOSFET
10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics …
Lecture 3B: The Ballistic MOSFET
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional …
Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent …
Lecture 4: Scattering in Nanoscale MOSFETs
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in …
Lecture 5: Application to State-of-the-Art FETs
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the …
Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom
NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic …
Physics of Nanoscale MOSFETs
26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of …
Lecture 1: Review of MOSFET Fundamentals
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the …
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
MOSFET - Theoretical Exercises
03 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
07 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias …
MOSfet Homework Assignment - Role of Dielectric Constant and Thickness
31 Jan 2008 | Teaching Materials | Contributor(s): David K. Ferry
Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters: Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes), poly-Si gate, junction depth of …
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