
Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008   Contributor(s):: Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.

Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008   Contributor(s):: Mark Lundstrom
No MOSFET is ever fully ballistic  there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...

Lecture 5: Application to StateoftheArt FETs
08 Sep 2008   Contributor(s):: Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.

Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008   Contributor(s):: Mark Lundstrom

2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008   Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottomup perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...

Physics of Nanoscale MOSFETs
26 Aug 2008   Contributor(s):: Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...

Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008   Contributor(s):: Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (driftdiffusion) approach and the meaning of ballistic transport is also included.

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008   Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education

MOSFET  Theoretical Exercises
03 Aug 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
www.eas.asu.edu/~vasileskNSF

MOSFET Exercise
07 Jul 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF

MOSfet Homework Assignment  Role of Dielectric Constant and Thickness
31 Jan 2008   Contributor(s):: David K. Ferry
Use the MOSfet tool on nanoHUB to simulate a nchannel MOSFET with the following parameters:Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),polySi gate, junction depth of 10 nm (20 nodes), and all other parametersat their nominal preset values.Now, change K to 20, and...

Semiconductor Device Education Material
28 Jan 2008   Contributor(s):: Gerhard Klimeck
This page has moved to "a Wiki page format" When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are...

Simulation of highly idealized, atomic scale MQCA logic circuits
15 Nov 2007   Contributor(s):: Dmitri Nikonov, George Bourianoff
Spintronics logic devices based on majority gates formed by atomiclevel arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by timedependent solution of the densitymatrix equation with relaxation. The devices are shown to satisfy requirements for...

Electronics From the Bottom Up: topdown/bottomup views of length
17 Aug 2007   Contributor(s):: Muhammad A. Alam
When devices get small stochastic effects become important. Random dopant effects lead to uncertainties in a MOSFET’s threshold voltage and gate oxides breakdown is a random process. Even a concept as simple as “channel length” becomes uncertain. This short (20 min) talk, a footnote to the...

Medici
13 May 2004   Contributor(s):: Steven Clark
MEDICI (Synopsys)

Introduction to nanoMOS
02 Jul 2007   Contributor(s):: James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...

PETE : Purdue Emerging Technology Evaluator
26 Jun 2007   Contributor(s):: Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy
Estimate circuit level performance and power of novel devices

CMOSNano Hybrid Technology: a nanoFPGArelated study
04 Apr 2007   Contributor(s):: Wei Wang
Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the Department of Electrical and Computer Engineering, the University of Western Ontario, London, ON, Canada....

MSE 376 Lecture 13: Nanoscale CMOS, part 2
31 Mar 2007 

MSE 376 Lecture 12: Nanoscale CMOS, part 1
31 Mar 2007 