
MOSFET Design Calculations  Step 3 (Instructor Copy)
01 Apr 2012   Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

Negative Bias Temperature Instability (NBTI) in pMOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
28 Mar 2012   Contributor(s):: Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Predictive Modeling (Part 3 of 3)
28 Mar 2012   Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
28 Mar 2012   Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Fast and Ultrafast Characterization Methods (Part 1 of 3)
28 Mar 2012   Contributor(s):: Souvik Mahapatra

MOSFET Design Simulation I
07 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Simulation I (Instructor Copy)
07 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 2 (Instructor Copy)
05 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 2
05 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

Silvaco Athena  Part 3
09 Aug 2011   Contributor(s):: Dragica Vasileska
This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.

MOSFET Lab Exercise: Series Resistance and Transistor Breakdown
13 Jul 2011   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how to simulate MOSFET operation near transistor breakdown.

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
11 May 2011   Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...

FETToy
14 Feb 2006   Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic IV characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

OMEN Nanowire Homework Problems
23 Jan 2011   Contributor(s):: SungGeun Kim
OMEN Nanowire homework problems: anyone who has gone through the firsttime user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.

MOSFET Lab  Scaling
02 Jan 2011   Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska
The concept of device scaling and the need to control short channel effects is used in this real life problem

MOSFET Design Calculations  Step 1
30 Dec 2010   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 1 (Instructor Copy)
30 Dec 2010   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 2
31 Dec 2010   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 2 (Instructor Copy)
31 Dec 2010   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Worked out problems 1
06 Dec 2010   Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.