Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Resources (81-100 of 109)

  1. Lecture 4: Scattering in Nanoscale MOSFETs

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...

    http://nanohub.org/resources/5311

  2. Lecture 5: Application to State-of-the-Art FETs

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...

    http://nanohub.org/resources/5312

  3. Introduction: Physics of Nanoscale MOSFETs

    26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation

    http://nanohub.org/resources/5317

  4. 2008 NCN@Purdue Summer School: Electronics from the Bottom Up

    26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom

    Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic...

    http://nanohub.org/resources/5305

  5. Physics of Nanoscale MOSFETs

    26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of...

    http://nanohub.org/resources/5306

  6. Lecture 1: Review of MOSFET Fundamentals

    26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and...

    http://nanohub.org/resources/5307

  7. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    08 Aug 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor device education

    http://nanohub.org/resources/abacus

  8. MOSFET - Theoretical Exercises

    04 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    www.eas.asu.edu/~vasileskNSF

    http://nanohub.org/resources/5191

  9. MOSFET Exercise

    08 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias...

    http://nanohub.org/resources/4906

  10. MOSfet Homework Assignment - Role of Dielectric Constant and Thickness

    31 Jan 2008 | Teaching Materials | Contributor(s): David K. Ferry

    Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters: Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes), poly-Si gate, junction depth...

    http://nanohub.org/resources/3948

  11. Semiconductor Device Education Material

    28 Jan 2008 | Teaching Materials | Contributor(s): Gerhard Klimeck

    This page has moved to "a Wiki page format" When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic...

    http://nanohub.org/resources/edu_semi

  12. Simulation of highly idealized, atomic scale MQCA logic circuits

    15 Nov 2007 | Papers | Contributor(s): Dmitri Nikonov, George Bourianoff

    Spintronics logic devices based on majority gates formed by atomic-level arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by time-dependent solution...

    http://nanohub.org/resources/3527

  13. Electronics From the Bottom Up: top-down/bottom-up views of length

    17 Aug 2007 | Online Presentations | Contributor(s): Muhammad A. Alam

    When devices get small stochastic effects become important. Random dopant effects lead to uncertainties in a MOSFET’s threshold voltage and gate oxides breakdown is a random process. ...

    http://nanohub.org/resources/2974

  14. Medici

    24 Jul 2007 | Tools | Contributor(s): Steven Clark

    MEDICI (Synopsys)

    http://nanohub.org/resources/medici

  15. Introduction to nanoMOS

    02 Jul 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo

    This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon...

    http://nanohub.org/resources/2845

  16. PETE : Purdue Emerging Technology Evaluator

    27 Jun 2007 | Tools | Contributor(s): Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy

    Estimate circuit level performance and power of novel devices

    http://nanohub.org/resources/pete

  17. CMOS-Nano Hybrid Technology: a nanoFPGA-related study

    04 Apr 2007 | Online Presentations | Contributor(s): Wei Wang

    Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the...

    http://nanohub.org/resources/2567

  18. MSE 376 Lecture 13: Nanoscale CMOS, part 2

    31 Mar 2007 | Online Presentations | Contributor(s): Mark Hersam

    http://nanohub.org/resources/2538

  19. MSE 376 Lecture 12: Nanoscale CMOS, part 1

    31 Mar 2007 | Online Presentations | Contributor(s): Mark Hersam

    http://nanohub.org/resources/2537

  20. Illinois Tools: MOCA

    28 Mar 2007 | Tools | Contributor(s): Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney

    A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures

    http://nanohub.org/resources/moca