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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
MATLAB: Negative Capacitance (NC) FET Model
05 Dec 2015 | Downloads | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam
MATLAB model that calculates the Q-V, C-V, and I-V characteristics of the conventional MOSFET and NC-FET.
A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015 | Online Presentations | Contributor(s): Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader...
Green Light on Germanium
02 Nov 2015 | Online Presentations | Contributor(s): peide ye
This talk will review recent progress as well as challenges on Ge research for future logic applications with emphasis on the breakthrough work at Purdue University on Ge nFET which leads to the...
0.0 out of 5 stars
23 Apr 2014 | Tools | Contributor(s): Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan
Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...
III-V Nanoscale MOSFETS: Physics, Modeling, and Design
28 Jun 2013 | Papers | Contributor(s): Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | Papers | Contributor(s): Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...
Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013 | Papers | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013 | Papers | Contributor(s): Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
ECE 695A Lecture 9R: Review Questions
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Does NBTI power-exponent depend on voltage or temperature?
Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?
How does one know that...
ECE 606 Lecture 27: Looking Back and Looking Forward
20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities
ECE 606 Lecture 24: MOSFET Non-Idealities
MIT Virtual-Source Tool
06 Nov 2012 | Tools | Contributor(s): Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom
Virtual Source Model for MOSFET compact modeling
Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities
19 Jul 2012 | Online Presentations | Contributor(s): Mark Lundstrom
MOSFET Design Calculations - Step 3
01 Apr 2012 | Teaching Materials | Contributor(s): Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...