
MATLAB: Negative Capacitance (NC) FET Model
05 Dec 2015   Contributor(s):: Muhammad Abdul Wahab, Muhammad A. Alam
MATLAB model that calculates the QV, CV, and IV characteristics of the conventional MOSFET and NCFET.

A Tutorial Introduction to NegativeCapacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015   Contributor(s):: Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NCFET is just a special case of a much broader class of phasechange devices and systems (e.g., transistors, memories, MEMS, logicinmemory...

Green Light on Germanium
02 Nov 2015   Contributor(s):: peide ye
This talk will review recent progress as well as challenges on Ge research for future logic applications with emphasis on the breakthrough work at Purdue University on Ge nFET which leads to the demonstration of the world first Ge CMOS circuits on Si substrates. Ge device technology includes...

MOSFET Simulation
04 Oct 2013   Contributor(s):: Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan
Displays drain current as a function of sourcedrain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an ntype MOSFET.

Tunnel FETs  Device Physics and Realizations
27 Jun 2013   Contributor(s):: Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

IIIV Nanoscale MOSFETS: Physics, Modeling, and Design
25 Jun 2013   Contributor(s):: Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which IIIV compound semiconductorbased...

Device Physics Studies of IIIV and Silicon MOSFETS for Digital Logic
25 Jun 2013   Contributor(s):: Himadri Pal
IIIV's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before IIIV's can replace silicon (Si) in extremely scaled devices. The effect of low densityofstates of IIIV...

Exploring New Channel Materials for Nanoscale CMOS
27 Jun 2013   Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and IIIV semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high# dielectrics,...

Nanoscale MOSFETS: Physics, Simulation and Design
27 Jun 2013   Contributor(s):: Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

TwoDimensional Scattering Matrix Simulations of Si MOSFET'S
27 Jun 2013   Contributor(s):: Carl R. Huster
For many years now, solid state device simulators have been based on the driftdiffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

Computational and Experimental Study of Transport in Advanced Silicon Devices
27 Jun 2013   Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

ECE 695A Lecture 9R: Review Questions
07 Feb 2013   Contributor(s):: Muhammad Alam
Review Questions:Does NBTI powerexponent depend on voltage or temperature?Do you expect the NBTI powerexponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the timeexponent different for a surround gate MOSFET vs. planar...

ECE 606 Lecture 27: Looking Back and Looking Forward
20 Dec 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 22: MOScap Frequence Response/MOSFET IV Characteristics
26 Nov 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 23: MOSFET IV Characteristics/MOSFET NonIdealities
26 Nov 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 24: MOSFET NonIdealities
26 Nov 2012   Contributor(s):: Gerhard Klimeck

MIT VirtualSource Tool
07 Aug 2012   Contributor(s):: Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom
Virtual Source Model for MOSFET compact modeling

Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities
19 Jul 2012   Contributor(s):: Mark Lundstrom

MOSFET Design Calculations  Step 3
01 Apr 2012   Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...