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ECE 606 L32.4: Modern MOSFET - Mobility Enhancement
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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From Apollo to Apple: How a Purdue Alum, Mohamed Atalla, Started Moore's Law and Transformed the World
02 Feb 2023 | | Contributor(s):: Muhammad A. Alam
The Silicon MOSFET, a better transistor. Demonstration of the 1960 silicon MOSFET (metal-oxide-semiconductor field-effect transistor), the mainstay of today’s electronics, which was co-invented by Purdue alumnus Mohamed M. Atalla at Bell Labs.
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Silvaco TCAD
28 Sep 2022 | | Contributor(s):: Eric Guichard, Silvaco, Inc.
SILVACO Semiconductor Process and Device Simulation for Educational Purposes Only, see License below.
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ABACUS MOSFETs (Spring 2022)
24 Jun 2022 | | Contributor(s):: Gerhard Klimeck
In the seventh session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOSFET Lab. Students can experiment with the classical scaling of a traditional 2D MOSFET....
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ABACUS MOS Capacitors (Spring 2022)
08 Jun 2022 | | Contributor(s):: Gerhard Klimeck
In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...
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ABACUS MOSFETs (Winter 2021)
08 Feb 2022 | | Contributor(s):: Gerhard Klimeck
In the seventh session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOSFET Lab. Students can experiment with the classical scaling of a traditional 2D MOSFET....
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ABACUS MOS Capacitors (Winter 2021)
31 Jan 2022 | | Contributor(s):: Gerhard Klimeck
In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...
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Fundamentals of Nanotransistors
30 Jan 2022 | | Contributor(s):: Mark Lundstrom
The objective of these lectures is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a...
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IWCN 2021: Simulation of Ballistic Spin-MOSFET Devices with Ferromagnetic Channels
15 Jul 2021 | | Contributor(s):: Patrizio Graziosi, Neophytos Neophytou
In this work, using the semiclassical top-of-the-barrier FET model, and a spin dependent contact resistance model derived from, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts.
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IWCN 2021: Electronic States in 4H-SiC MOS Inversion Layers Considering Crystal Structure Using Empirical Pseudopotential Method
15 Jul 2021 | | Contributor(s):: Sachika Nagamizo, Hajime Tanaka, Nobuya Mori
In this study, to analyze the electronic states in 4H-SiC MOS inversion layers taking account of this feature, we described the crystal structure of 4H-SiC including the internal channel space using the empirical pseudopotential method, and we calculated the electronic states in the triangular...
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IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges
15 Jul 2021 | | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young
In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...
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IWCN 2021: Ab initio Quantum Transport Simulation of Lateral Heterostructures Based on 2D Materials: Assessment of the Coupling Hamiltonians
14 Jul 2021 | | Contributor(s):: Adel Mfoukh, Marco Pala
Lateral heterostructures based on lattice-matched 2D materials are a promising option to design efficient electron devices such as MOSFETs [1], tunnel-FETs [2] and energy-filtering FETs [3]. In order to rigorously describe the transport through such heterostructures, an ab-initio approach based...
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MOSFET Design
12 Jan 2021 | | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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Compact NEGF-Based Solver for Double-Gate MOSFETs
17 Nov 2020 | | Contributor(s):: Fabian Hosenfeld, Alexander Kloes
Fast simulation of the DC current in a nanoscale double-gate MOSFET including thermionic emission and source-to-drain tunneling current.
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Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org
19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed
The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...
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Windows based Interactive tool for the simulation of the MOS electrostatics
26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...
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Windows based Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes
26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...
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Ubuntu based Interactive tool for the simulation of the MOS electrostatics
26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work under...
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MOS Simulator
25 Jun 2019 | | Contributor(s):: Biswajeet Sahoo
National Institute of Technology,Rourkela. This is an Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes
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Moore’s Law Extension and Beyond
19 Nov 2018 | | Contributor(s):: Peide "Peter" Ye
In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore’s Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier,...