Semiconductor Device Education Material

28 Jan 2008 | Teaching Materials | Contributor(s): Gerhard Klimeck

This page has moved to "a Wiki page format" When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic …

https://nanohub.org/resources/edu_semi

Simulation of highly idealized, atomic scale MQCA logic circuits

15 Nov 2007 | Publications | Contributor(s): Dmitri Nikonov, George Bourianoff

Spintronics logic devices based on majority gates formed by atomic-level arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by time-dependent solution of …

https://nanohub.org/resources/3527

Electronics From the Bottom Up: top-down/bottom-up views of length

17 Aug 2007 | Online Presentations | Contributor(s): Muhammad A. Alam

When devices get small stochastic effects become important. Random dopant effects lead to uncertainties in a MOSFET’s threshold voltage and gate oxides breakdown is a random process. Even a …

https://nanohub.org/resources/2974

Medici

13 May 2004 | Tools | Contributor(s): Steven Clark

MEDICI (Synopsys)

https://nanohub.org/resources/medici

Introduction to nanoMOS

02 Jul 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo

This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon …

https://nanohub.org/resources/2845

Introduction to Schred

28 Jun 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo

This learning module introduces nanoHUB users to the Schred simulator. A brief introduction to Schred is presented, followed by voiced presentations featuring the simulator in action. Upon …

https://nanohub.org/resources/2847

PETE : Purdue Emerging Technology Evaluator

26 Jun 2007 | Tools | Contributor(s): Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy

Estimate circuit level performance and power of novel devices

https://nanohub.org/resources/pete

CMOS-Nano Hybrid Technology: a nanoFPGA-related study

04 Apr 2007 | Online Presentations | Contributor(s): Wei Wang

Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the …

https://nanohub.org/resources/2567

MSE 376 Lecture 13: Nanoscale CMOS, part 2

31 Mar 2007 | Online Presentations | Contributor(s): Mark Hersam

https://nanohub.org/resources/2538

MSE 376 Lecture 12: Nanoscale CMOS, part 1

31 Mar 2007 | Online Presentations | Contributor(s): Mark Hersam

https://nanohub.org/resources/2537

Illinois Tools: MOCA

28 Mar 2007 | Tools | Contributor(s): Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney

A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures

https://nanohub.org/resources/moca

MOSCNT: code for carbon nanotube transistor simulation

14 Nov 2006 | Downloads | Contributor(s): Siyu Koswatta, Jing Guo, Dmitri Nikonov

Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor …

https://nanohub.org/resources/1989

Nanoscale MOSFETs: Physics, Simulation and Design

26 Oct 2006 | Publications | Contributor(s): Zhibin Ren

This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of …

https://nanohub.org/resources/1917

nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

06 Oct 2006 | Publications | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of …

https://nanohub.org/resources/1875

Modeling Interface-defect Generation (MIG)

18 Jul 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam

Analyzes device reliability based on NBTI

https://nanohub.org/resources/devrel

MOSFet

30 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

https://nanohub.org/resources/mosfet

Fabrication of a MOSFET within a Microprocessor

16 Nov 2005 | Animations | Contributor(s): John C. Bean

This resource depicts the step-by-step process by which the transistors of an integrated circuit are made.

https://nanohub.org/resources/440

FETToy 2.0 Source Code Download

09 Mar 2005 | Downloads

FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy …

https://nanohub.org/resources/107

Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap?

20 Apr 2004 | Online Presentations | Contributor(s): Jerry M. Woodall

Strained Si and SiGe MOSFET technologies face fundamental limits towards the end of this decade when the technology roadmap calls for gate dimensions of 45 nm headed for 22 nm. This fact, and …

https://nanohub.org/resources/163

Nanoelectronics and the Future of Microelectronics

22 Aug 2002 | Online Presentations | Contributor(s): Mark Lundstrom

Progress in silicon technology continues to outpace the historic pace of Moore's Law, but the end of device scaling now seems to be only 10-15 years away. As a result, there is intense interest in …

https://nanohub.org/resources/141