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Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Resources (101-108 of 108)

  1. Nanoscale MOSFETs: Physics, Simulation and Design

    26 Oct 2006 | Papers | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...

    http://nanohub.org/resources/1917

  2. nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

    06 Oct 2006 | Papers | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

    A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of...

    http://nanohub.org/resources/1875

  3. Modeling Interface-defect Generation (MIG)

    18 Jul 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam

    Analyzes device reliability based on NBTI

    http://nanohub.org/resources/devrel

  4. MOSFet

    30 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman

    Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

    http://nanohub.org/resources/mosfet

  5. Fabrication of a MOSFET within a Microprocessor

    16 Nov 2005 | Animations | Contributor(s): John C. Bean

    This resource depicts the step-by-step process by which the transistors of an integrated circuit are made.

    http://nanohub.org/resources/440

  6. FETToy 2.0 Source Code Download

    09 Mar 2005 | Downloads

    FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy...

    http://nanohub.org/resources/107

  7. Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap?

    20 Apr 2004 | Online Presentations | Contributor(s): Jerry M. Woodall

    Strained Si and SiGe MOSFET technologies face fundamental limits towards the end of this decade when the technology roadmap calls for gate dimensions of 45 nm headed for 22 nm. This fact, and...

    http://nanohub.org/resources/163

  8. Nanoelectronics and the Future of Microelectronics

    22 Aug 2002 | Online Presentations | Contributor(s): Mark Lundstrom

    Progress in silicon technology continues to outpace the historic pace of Moore's Law, but the end of device scaling now seems to be only 10-15 years away. As a result, there is intense interest in...

    http://nanohub.org/resources/141

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.