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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
MOSFet Demonstration: MOSFET Device Simulation and Analysis
11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.
ECE 539 Report: Study of two-dimensional Shrodinger-Poisson Solver
01 Jun 2009 | | Contributor(s):: Fawad Hassan
We solve the 2-Dimensional Shrodinger-Poisson system of equations using a self consistent scheme (like Gummel Iteration). We study a double gate Silicon Mosfet oriented in the 100 direction using the above setup. We assume a simple 6-valley bandstructure for Silicon.
ECE 606 Lecture 38: Modern MOSFET
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07 May 2009 | | Contributor(s):: Muhammad A. Alam
ECE 606 Lecture 40: Looking Back and Looking Forward
30 Apr 2009 | | Contributor(s)::
ECE 606 Lecture 37b: Nonideal Effects in MOSFET II
28 Apr 2009 | | Contributor(s):: Muhammad A. Alam
ECE 606 Lecture 36: MOSFET I-V Characteristics II
ECE 606 Lecture 37a: Nonideal Effects in MOSFET I
ECE 606 Lecture 35: MOSFET I-V Characteristics I
16 Apr 2009 | | Contributor(s):: Muhammad A. Alam
MOSCap: First-Time User Guide
30 Mar 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...
02 Sep 2008 | | Contributor(s):: SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh
Full-band 3D quantum transport simulation in nanowire structure
ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.
ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008 | | Contributor(s):: Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.
ECE 612 Lecture 18A: CMOS Process Steps
12 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Unit Process Operations,2) Process Variations.
ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.
ECE 612 Lecture 7: Scattering Theory of the MOSFET I
29 Sep 2008 | | Contributor(s):: Muhammad A. Alam
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008 | | Contributor(s):: Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.
Lecture 3A: The Ballistic MOSFET
10 Sep 2008 | | Contributor(s):: Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...
Lecture 3B: The Ballistic MOSFET
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins...