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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
Lecture 2: Elementary Theory of the Nanoscale MOSFET
0.0 out of 5 stars
08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent...
Lecture 4: Scattering in Nanoscale MOSFETs
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...
Lecture 5: Application to State-of-the-Art FETs
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...
Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom
NCN@Purdue Summer School 2008
National Science Fondation
NCN@Purdue Summer School 2008
National Science Fondation
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic...
Physics of Nanoscale MOSFETs
3.5 out of 5 stars
26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of...
Lecture 1: Review of MOSFET Fundamentals
4.0 out of 5 stars
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
5.0 out of 5 stars
08 Aug 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
MOSFET - Theoretical Exercises
04 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
08 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias...
MOSfet Homework Assignment - Role of Dielectric Constant and Thickness
31 Jan 2008 | Teaching Materials | Contributor(s): David K. Ferry
Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters:
Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),
poly-Si gate, junction depth...
Semiconductor Device Education Material
28 Jan 2008 | Teaching Materials | Contributor(s): Gerhard Klimeck
This page has moved to "a Wiki page format"
When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic...
Simulation of highly idealized, atomic scale MQCA logic circuits
15 Nov 2007 | Papers | Contributor(s): Dmitri Nikonov, George Bourianoff
Spintronics logic devices based on majority gates formed by atomic-level arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by time-dependent solution...
Electronics From the Bottom Up: top-down/bottom-up views of length
17 Aug 2007 | Online Presentations | Contributor(s): Muhammad A. Alam
When devices get small stochastic effects become important. Random
dopant effects lead to uncertainties in a MOSFET’s threshold voltage
and gate oxides breakdown is a random process. Even...
4.5 out of 5 stars
24 Jul 2007 | Tools | Contributor(s): Steven Clark
Introduction to nanoMOS
02 Jul 2007 | Series | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon...
PETE : Purdue Emerging Technology Evaluator
27 Jun 2007 | Tools | Contributor(s): Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy
Estimate circuit level performance and power of novel devices
CMOS-Nano Hybrid Technology: a nanoFPGA-related study
04 Apr 2007 | Online Presentations | Contributor(s): Wei Wang
Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the...
MSE 376 Lecture 13: Nanoscale CMOS, part 2
31 Mar 2007 | Online Presentations | Contributor(s): Mark Hersam
MSE 376 Lecture 12: Nanoscale CMOS, part 1