Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Resources (1-20 of 153)

  1. Essential Physics of the Ultimate MOSFET and the Next 20 Years of Semiconductor Technology

    18 Mar 2024 |

    My goal in this talk is to discuss the operation of these devices in a simple but physically sound way. A broader goal of my talk is to discuss how semiconductor technology will meet the insatiable appetite that artificial intelligence has for more computing, more memory, and faster communication.

  2. A Matlab 2D-Poisson-drift-diffusion simulator for semiconductor devices

    04 Mar 2024 | | Contributor(s):: Chien-Ting Tung

    A Matlab 2D-Poisson-Drift-Diffusion solver for simple MOSFETs. It uses finite difference method, Slotboom variable, and Gummel iteration.Boltzmann statistics and velocity saturation is considered. 

  3. Transistors!

    04 Mar 2024 | | Contributor(s):: Mark Lundstrom

    As we begin a new era, in which making transistors smaller will no longer be a major driving force for progress, it is time to look back at what we have learned in transistor research. Today we see a need to convey as simply and clearly as possible the essential physics of the device that makes...

  4. Perspectives on Ion-Induced Power Device Burnout in Space

    02 Nov 2023 | | Contributor(s):: Kenneth F. Galloway, Scooter Ball

  5. Modeling Radiation Effects from the Component Level to the System Level

    24 Oct 2023 | | Contributor(s):: Ronald Schrimpf

  6. ABACUS Tool Suite and MOS Capacitors (Fall 2023)

    19 Oct 2023 | | Contributor(s):: Gerhard Klimeck

    In the sixth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip

  7. ABACUS Tool Suite and MOSFETs (Fall 2023)

    19 Oct 2023 | | Contributor(s):: Gerhard Klimeck

    In the seventh session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the MOSFET Lab. Students can experiment with the classical scaling of a traditional 2D MOSFET.

  8. SDMS L4.04: Generation-Recombination Mechanisms Modeling

    09 Oct 2023 | | Contributor(s):: Dragica Vasileska

  9. ECE 606: Solid State Devices I

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

    This course provides the graduate-level introduction to understand, analyze, characterize and design the operation of semiconductor devices such as transistors, diodes, solar cells, light-emitting devices, and more.The material will primarily appeal to electrical engineering students whose...

  10. ECE 606 L2.3: Materials - Atomic Positions and Bond Orientations

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  11. ECE 606 L30.1: MOSFET Introduction - Sub-Threshold (Depletion) Current

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  12. ECE 606 L30.2: MOSFET Introduction - Above-Threshold, Inversion Current

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  13. ECE 606 L30.3: MOSFET Introduction - Velocity Saturation in Simplified Theory

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  14. ECE 606 L30.4: MOSFET Introduction - Comments on Bulk Charge Theory & Small Transistors

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  15. ECE 606 L31.1: MOSFET Non-Idealities - Flat Band Voltage - What Is It and How to Measure It?

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  16. ECE 606 L31.2: MOSFET Non-Idealities - Threshold Voltage Shift Due to Trapped Charges

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  17. ECE 606 L31.3: MOSFET Non-Idealities - Physics of Interface Traps

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  18. ECE 606 L32.1: Modern MOSFET - Some of Moore's Law Challenges

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  19. ECE 606 L32.2: Modern MOSFET - Short Channel Effect

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  20. ECE 606 L32.3: Modern MOSFET - Control of Threshold Voltage

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck