Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Resources (101-120 of 153)

  1. MOSFet: First-Time User Guide

    13 Jun 2009 | | Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley

    This first-time user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOI-MOSFETs is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs,...

  2. Band Structure Lab Demonstration: Bulk Strain

    12 Jun 2009 | | Contributor(s):: Gerhard Klimeck

    This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

  3. MOSFet Demonstration: MOSFET Device Simulation and Analysis

    11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley

    This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.

  4. ECE 539 Report: Study of two-dimensional Shrodinger-Poisson Solver

    01 Jun 2009 | | Contributor(s):: Fawad Hassan

    We solve the 2-Dimensional Shrodinger-Poisson system of equations using a self consistent scheme (like Gummel Iteration). We study a double gate Silicon Mosfet oriented in the 100 direction using the above setup. We assume a simple 6-valley bandstructure for Silicon.

  5. ECE 606 Lecture 38: Modern MOSFET

    07 May 2009 | | Contributor(s):: Muhammad A. Alam

  6. ECE 606 Lecture 40: Looking Back and Looking Forward

    30 Apr 2009 |

  7. ECE 606 Lecture 37b: Nonideal Effects in MOSFET II

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  8. ECE 606 Lecture 36: MOSFET I-V Characteristics II

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  9. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  10. ECE 606 Lecture 35: MOSFET I-V Characteristics I

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  11. MOSCap: First-Time User Guide

    30 Mar 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck

    This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...

  12. OMEN Nanowire

    02 Sep 2008 | | Contributor(s):: SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh

    Full-band 3D quantum transport simulation in nanowire structure

  13. ECE 612 Lecture 26: Heterostructure FETs

    10 Dec 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.

  14. ECE 612 Lecture 18B: CMOS Process Flow

    18 Nov 2008 | | Contributor(s):: Mark Lundstrom

    For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.

  15. ECE 612 Lecture 18A: CMOS Process Steps

    12 Nov 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Unit Process Operations,2) Process Variations.

  16. ECE 612 Lecture 8: Scattering Theory of the MOSFET II

    08 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.

  17. ECE 612 Lecture 7: Scattering Theory of the MOSFET I

    08 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.

  18. Introductory Comments

    29 Sep 2008 | | Contributor(s):: Muhammad A. Alam

  19. Lecture 7: Connection to the Bottom Up Approach

    23 Sep 2008 | | Contributor(s):: Mark Lundstrom

    While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.

  20. Lecture 3B: The Ballistic MOSFET

    10 Sep 2008 | | Contributor(s):: Mark Lundstrom

    This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.