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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
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26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic...
A methodology for SPICE-compatible modeling of nanoMOSFETs
17 Nov 2010 | Teaching Materials | Contributor(s): Alba Graciela Avila, David Espejo
An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation...
A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015 | Online Presentations | Contributor(s): Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
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16 Jul 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
ABACUS: Test for MOSFET Tool
18 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have...
Atomistic Simulations of Reliability
06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have...
Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
CMOS-Nano Hybrid Technology: a nanoFPGA-related study
04 Apr 2007 | Online Presentations | Contributor(s): Wei Wang
Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | Papers | Contributor(s): Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...
ECE 539 Report: Study of two-dimensional Shrodinger-Poisson Solver
01 Jun 2009 | Downloads | Contributor(s): Fawad Hassan
We solve the 2-Dimensional Shrodinger-Poisson system of equations using a self consistent scheme (like Gummel Iteration). We study a double gate Silicon Mosfet oriented in the 100 direction using...
ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities
ECE 606 Lecture 24: MOSFET Non-Idealities
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 27: Looking Back and Looking Forward
20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 35: MOSFET I-V Characteristics I
16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
ECE 606 Lecture 36: MOSFET I-V Characteristics II
28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
ECE 606 Lecture 37a: Nonideal Effects in MOSFET I
ECE 606 Lecture 37b: Nonideal Effects in MOSFET II