The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Resources (1-20 of 110)

  1. 2008 NCN@Purdue Summer School: Electronics from the Bottom Up

    26 Aug 2008 | | Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom

    Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...

  2. A methodology for SPICE-compatible modeling of nanoMOSFETs

    17 Nov 2010 | | Contributor(s):: Alba Graciela Avila, David Espejo

    An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his class that is not...

  3. A Tutorial Introduction to Negative-­Capacitor Landau Transistors: Perspectives on the Road Ahead

    04 Dec 2015 | | Contributor(s):: Muhammad A. Alam

    In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...

  4. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    16 Jul 2008 | | Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor device education

  5. ABACUS: Test for MOSFET Tool

    17 Oct 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...

  6. Atomistic Simulations of Reliability

    01 Jul 2010 | | Contributor(s):: Dragica Vasileska

    Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intra-die and die-to-die...

  7. Band Structure Lab Demonstration: Bulk Strain

    03 Jun 2009 | | Contributor(s):: Gerhard Klimeck

    This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

  8. CMOS-Nano Hybrid Technology: a nanoFPGA-related study

    04 Apr 2007 | | Contributor(s):: Wei Wang

    Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the Department of Electrical and Computer Engineering, the University of Western Ontario, London, ON, Canada....

  9. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  10. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V...

  11. ECE 539 Report: Study of two-dimensional Shrodinger-Poisson Solver

    01 Jun 2009 | | Contributor(s):: Fawad Hassan

    We solve the 2-Dimensional Shrodinger-Poisson system of equations using a self consistent scheme (like Gummel Iteration). We study a double gate Silicon Mosfet oriented in the 100 direction using the above setup. We assume a simple 6-valley bandstructure for Silicon.

  12. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  13. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  14. ECE 606 Lecture 24: MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  15. ECE 606 Lecture 25: Modern MOSFETs

    03 Dec 2012 | | Contributor(s):: Gerhard Klimeck

  16. ECE 606 Lecture 27: Looking Back and Looking Forward

    20 Dec 2012 | | Contributor(s):: Gerhard Klimeck

  17. ECE 606 Lecture 35: MOSFET I-V Characteristics I

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  18. ECE 606 Lecture 36: MOSFET I-V Characteristics II

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  19. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  20. ECE 606 Lecture 37b: Nonideal Effects in MOSFET II

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam