
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008   Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottomup perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...

A methodology for SPICEcompatible modeling of nanoMOSFETs
17 Nov 2010   Contributor(s):: Alba Graciela Avila, David Espejo
An original SPICEcompatible model for Intel's 45nm HighK MOSFET is presented. It takes into account some QuantumMechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his class that is not...

A Tutorial Introduction to NegativeCapacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015   Contributor(s):: Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NCFET is just a special case of a much broader class of phasechange devices and systems (e.g., transistors, memories, MEMS, logicinmemory...

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008   Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education

ABACUS: Test for MOSFET Tool
17 Oct 2010   Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...

Atomistic Simulations of Reliability
01 Jul 2010   Contributor(s):: Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intradie and dietodie...

Band Structure Lab Demonstration: Bulk Strain
03 Jun 2009   Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

CMOSNano Hybrid Technology: a nanoFPGArelated study
04 Apr 2007   Contributor(s):: Wei Wang
Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the Department of Electrical and Computer Engineering, the University of Western Ontario, London, ON, Canada....

Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013   Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

Device Physics Studies of IIIV and Silicon MOSFETS for Digital Logic
28 Jun 2013   Contributor(s):: Himadri Pal
IIIV's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before IIIV's can replace silicon (Si) in extremely scaled devices. The effect of low densityofstates of IIIV...

ECE 539 Report: Study of twodimensional ShrodingerPoisson Solver
01 Jun 2009   Contributor(s):: Fawad Hassan
We solve the 2Dimensional ShrodingerPoisson system of equations using a self consistent scheme (like Gummel Iteration). We study a double gate Silicon Mosfet oriented in the 100 direction using the above setup. We assume a simple 6valley bandstructure for Silicon.

ECE 606 Lecture 22: MOScap Frequence Response/MOSFET IV Characteristics
26 Nov 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 23: MOSFET IV Characteristics/MOSFET NonIdealities
26 Nov 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 24: MOSFET NonIdealities
26 Nov 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 27: Looking Back and Looking Forward
20 Dec 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 35: MOSFET IV Characteristics I
16 Apr 2009   Contributor(s):: Muhammad A. Alam

ECE 606 Lecture 36: MOSFET IV Characteristics II
28 Apr 2009   Contributor(s):: Muhammad A. Alam

ECE 606 Lecture 37a: Nonideal Effects in MOSFET I
28 Apr 2009   Contributor(s):: Muhammad A. Alam

ECE 606 Lecture 37b: Nonideal Effects in MOSFET II
28 Apr 2009   Contributor(s):: Muhammad A. Alam