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Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Resources (1-20 of 108)

  1. MOSFET Design Calculations - Step 3

    01 Apr 2012 | Teaching Materials | Contributor(s): Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13675

  2. MOSFET Design Calculations - Step 3 (Instructor Copy)

    01 Apr 2012 | Teaching Materials | Contributor(s): Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13677

  3. MOSFET Design Simulation I

    07 Mar 2012 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13398

  4. MOSFET Design Simulation I (Instructor Copy)

    07 Mar 2012 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13400

  5. MOSFET Design Calculations - Step 2 (Instructor Copy)

    05 Mar 2012 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13360

  6. MOSFET Design Calculations - Step 2

    05 Mar 2012 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13358

  7. Silvaco Athena - Part 3

    09 Aug 2011 | Teaching Materials | Contributor(s): Dragica Vasileska

    This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.

    http://nanohub.org/resources/11819

  8. MOSFET Lab Exercise: Series Resistance and Transistor Breakdown

    13 Jul 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how...

    http://nanohub.org/resources/11650

  9. OMEN Nanowire Homework Problems

    24 Jan 2011 | Teaching Materials | Contributor(s): SungGeun Kim

    OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework...

    http://nanohub.org/resources/10512

  10. MOSFET Lab - Scaling

    03 Jan 2011 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

    The concept of device scaling and the need to control short channel effects is used in this real life problem

    http://nanohub.org/resources/10268

  11. MOSFET Design Calculations - Step 1

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10245

  12. MOSFET Design Calculations - Step 1 (Instructor Copy)

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10252

  13. MOSFET Design Calculations - Step 2

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10258

  14. MOSFET Design Calculations - Step 2 (Instructor Copy)

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10260

  15. MOSFET Worked out problems 1

    06 Dec 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

    Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

    http://nanohub.org/resources/10128

  16. A methodology for SPICE-compatible modeling of nanoMOSFETs

    17 Nov 2010 | Teaching Materials | Contributor(s): Alba Graciela Avila, David Espejo

    An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation...

    http://nanohub.org/resources/10024

  17. ABACUS: Test for MOSFET Tool

    18 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have...

    http://nanohub.org/resources/9882

  18. Verification of the Validity of the MOSFET Tool

    11 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the...

    http://nanohub.org/resources/9841

  19. Atomistic Simulations of Reliability

    06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

    Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have...

    http://nanohub.org/resources/9253

  20. Exercise for MOSFET Lab: Device Scaling

    28 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    This exercise explores device scaling and how well devices are designed.

    http://nanohub.org/resources/9221

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