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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
Illinois ECE 440: MOS Field-Effect Transistor Homework
28 Jan 2010 | | Contributor(s):: Mohamed Mohamed
This homework covers Output Characteristics and Mobility Model of MOSFETs.
Tutorial for PADRE Based Simulation Tools
10 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nano-scale devices.
Exercise for MOSFET Lab: Long Channel vs. Short Channel Device
03 Aug 2009 | | Contributor(s):: Dragica Vasileska
In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts to play significant role.
Exercise for MOSFET Lab: DIBL Effect
03 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.
MOSFet: First-Time User Guide
13 Jun 2009 | | Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley
This first-time user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOI-MOSFETs is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs,...
MOSCap: First-Time User Guide
30 Mar 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...
MOSFET - Theoretical Exercises
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03 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
07 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF
MOSfet Homework Assignment - Role of Dielectric Constant and Thickness
31 Jan 2008 | | Contributor(s):: David K. Ferry
Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters:Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),poly-Si gate, junction depth of 10 nm (20 nodes), and all other parametersat their nominal preset values.Now, change K to 20, and...
Semiconductor Device Education Material
28 Jan 2008 | | Contributor(s):: Gerhard Klimeck
This page has moved to "a Wiki page format"When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are built from...