The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Teaching Materials (21-30 of 30)

  1. Illinois ECE 440: MOS Field-Effect Transistor Homework

    28 Jan 2010 | | Contributor(s):: Mohamed Mohamed

    This homework covers Output Characteristics and Mobility Model of MOSFETs.

  2. Tutorial for PADRE Based Simulation Tools

    10 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nano-scale devices.

  3. Exercise for MOSFET Lab: Long Channel vs. Short Channel Device

    03 Aug 2009 | | Contributor(s):: Dragica Vasileska

    In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts to play significant role.

  4. Exercise for MOSFET Lab: DIBL Effect

    03 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.

  5. MOSFet: First-Time User Guide

    13 Jun 2009 | | Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley

    This first-time user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOI-MOSFETs is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs,...

  6. MOSCap: First-Time User Guide

    30 Mar 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck

    This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...

  7. MOSFET - Theoretical Exercises

    03 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck


  8. MOSFET Exercise

    07 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF

  9. MOSfet Homework Assignment - Role of Dielectric Constant and Thickness

    31 Jan 2008 | | Contributor(s):: David K. Ferry

    Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters:Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),poly-Si gate, junction depth of 10 nm (20 nodes), and all other parametersat their nominal preset values.Now, change K to 20, and...

  10. Semiconductor Device Education Material

    28 Jan 2008 | | Contributor(s):: Gerhard Klimeck

    This page has moved to "a Wiki page format"When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are built from...