Illinois ECE 440: MOS Field-Effect Transistor Homework

28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed

This homework covers Output Characteristics and Mobility Model of MOSFETs.

https://nanohub.org/resources/8268

Tutorial for PADRE Based Simulation Tools

10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to …

https://nanohub.org/resources/7223

Exercise for MOSFET Lab: Long Channel vs. Short Channel Device

03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska

In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts to …

https://nanohub.org/resources/7188

Exercise for MOSFET Lab: DIBL Effect

03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.

https://nanohub.org/resources/7190

MOSFet: First-Time User Guide

13 Jun 2009 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Benjamin P Haley

This first-time user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOI-MOSFETs is followed by a tour of the Rappture interface, which notes key inputs and …

https://nanohub.org/resources/6900

MOSCap: First-Time User Guide

30 Mar 2009 | Teaching Materials | Contributor(s): SungGeun Kim, Benjamin P Haley, Gerhard Klimeck

This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate …

https://nanohub.org/resources/6546

MOSFET - Theoretical Exercises

03 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

www.eas.asu.edu/~vasileskNSF

https://nanohub.org/resources/5191

MOSFET Exercise

07 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias …

https://nanohub.org/resources/4906

MOSfet Homework Assignment - Role of Dielectric Constant and Thickness

31 Jan 2008 | Teaching Materials | Contributor(s): David K. Ferry

Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters: Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes), poly-Si gate, junction depth of …

https://nanohub.org/resources/3948

Semiconductor Device Education Material

28 Jan 2008 | Teaching Materials | Contributor(s): Gerhard Klimeck

This page has moved to "a Wiki page format" When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic …

https://nanohub.org/resources/edu_semi