
MOSFET Design Calculations  Step 3
01 Apr 2012   Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 3 (Instructor Copy)
01 Apr 2012   Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Simulation I
07 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Simulation I (Instructor Copy)
07 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 2 (Instructor Copy)
05 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 2
05 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

Silvaco Athena  Part 3
09 Aug 2011   Contributor(s):: Dragica Vasileska
This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.

MOSFET Lab Exercise: Series Resistance and Transistor Breakdown
13 Jul 2011   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how to simulate MOSFET operation near transistor breakdown.

OMEN Nanowire Homework Problems
24 Jan 2011   Contributor(s):: SungGeun Kim
OMEN Nanowire homework problems: anyone who has gone through the firsttime user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.

MOSFET Lab  Scaling
03 Jan 2011   Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska
The concept of device scaling and the need to control short channel effects is used in this real life problem

MOSFET Design Calculations  Step 1
02 Jan 2011   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 1 (Instructor Copy)
02 Jan 2011   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 2
02 Jan 2011   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 2 (Instructor Copy)
02 Jan 2011   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Worked out problems 1
06 Dec 2010   Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

A methodology for SPICEcompatible modeling of nanoMOSFETs
17 Nov 2010   Contributor(s):: Alba Graciela Avila, David Espejo
An original SPICEcompatible model for Intel's 45nm HighK MOSFET is presented. It takes into account some QuantumMechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his class that is not...

ABACUS: Test for MOSFET Tool
18 Oct 2010   Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...

Verification of the Validity of the MOSFET Tool
11 Oct 2010   Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on BulkCharge theory. Parasitic resistance is used as a fitting parameter in the analytical model. MATLAB script used for verification is also available for download.

Atomistic Simulations of Reliability
06 Jul 2010   Contributor(s):: Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intradie and dietodie...

Exercise for MOSFET Lab: Device Scaling
28 Jun 2010   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise explores device scaling and how well devices are designed.