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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
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One-stop-shop for teaching semiconductor device education
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Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
Illinois Tools: MOCA
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A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures
4.5 out of 5 stars
13 May 2004 | Tools | Contributor(s): Steven Clark
MIT Virtual-Source Tool
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Virtual Source Model for MOSFET compact modeling
Modeling Interface-defect Generation (MIG)
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Analyzes device reliability based on NBTI
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Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
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Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.
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Full-band 3D quantum transport simulation in nanowire structure
PETE : Purdue Emerging Technology Evaluator
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Estimate circuit level performance and power of novel devices