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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
MATLAB: Negative Capacitance (NC) FET Model
05 Dec 2015 | Downloads | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam
MATLAB model that calculates the Q-V, C-V, and I-V characteristics of the conventional MOSFET and NC-FET.
A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015 | Online Presentations | Contributor(s): Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader...
how to simulate insulator in a GNRFET with matlab?
Closed | Responses: 0
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
Ivan C R nascimento
Convergence problem, take smaller steps
I receive this error when running the MOSFET tool. Any one can suggest a solution
Models for SETs in PSpice
Hello. I am trying to simulate hybrid circuits (cMOS SET transistors) and I can't find models for SET, anywhere... I only want a SET that can simulate properly along with regular...
0.0 out of 5 stars
04 Oct 2013 | Tools | Contributor(s): Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan
Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | Papers | Contributor(s): Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...
III-V Nanoscale MOSFETS: Physics, Modeling, and Design
28 Jun 2013 | Papers | Contributor(s): Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013 | Papers | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013 | Papers | Contributor(s): Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...
Mohamed Tarek Ghoneim
ECE 695A Lecture 9R: Review Questions
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Does NBTI power-exponent depend on voltage or temperature?
Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?
How does one know that...
ECE 606 Lecture 27: Looking Back and Looking Forward
20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck