
MATLAB: Negative Capacitance (NC) FET Model
05 Dec 2015  Downloads  Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam
MATLAB model that calculates the QV, CV, and IV characteristics of the conventional MOSFET and NCFET.
http://nanohub.org/resources/23185

A Tutorial Introduction to NegativeCapacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015  Online Presentations  Contributor(s): Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NCFET is just a special case of a much broader...
http://nanohub.org/resources/23157

how to simulate insulator in a GNRFET with matlab?
Closed  Responses: 0
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
http://nanohub.org/answers/question/1583

Ivan C R nascimento
http://nanohub.org/members/121504

Himanshu Rai
http://nanohub.org/members/117669

Convergence problem, take smaller steps
Closed  Responses: 0
I receive this error when running the MOSFET tool. Any one can suggest a solution
http://nanohub.org/answers/question/1488

Models for SETs in PSpice
Closed  Responses: 0
Hello. I am trying to simulate hybrid circuits (cMOS SET transistors) and I can't find models for SET, anywhere... I only want a SET that can simulate properly along with regular...
http://nanohub.org/answers/question/1399

MOSFET Simulation
04 Oct 2013  Tools  Contributor(s): Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan
Displays drain current as a function of sourcedrain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an ntype MOSFET.
http://nanohub.org/resources/mosfetsat

Al Key
Technology refresh
http://nanohub.org/members/89988

Tunnel FETs  Device Physics and Realizations
10 Jul 2013  Online Presentations  Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...
http://nanohub.org/resources/18723

Device Physics Studies of IIIV and Silicon MOSFETS for Digital Logic
28 Jun 2013  Papers  Contributor(s): Himadri Pal
IIIV's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before IIIV's can...
http://nanohub.org/resources/18697

IIIV Nanoscale MOSFETS: Physics, Modeling, and Design
28 Jun 2013  Papers  Contributor(s): Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...
http://nanohub.org/resources/18694

Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013  Papers  Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
http://nanohub.org/resources/18769

Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013  Papers  Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and IIIV semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
http://nanohub.org/resources/18738

Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013  Papers  Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...
http://nanohub.org/resources/18763

TwoDimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013  Papers  Contributor(s): Carl R. Huster
For many years now, solid state device simulators have been based on the driftdiffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...
http://nanohub.org/resources/18765

Mohamed Tarek Ghoneim
Keywords: device physics, flexible electronics, nanotechnology, graphene, nonvolatile memory, reliability, CMOS, physical and electrical characterization, emerging devices, power management, VLSI,...
http://nanohub.org/members/77955

ECE 695A Lecture 9R: Review Questions
08 Feb 2013  Online Presentations  Contributor(s): Muhammad Alam
Review Questions:
Does NBTI powerexponent depend on voltage or temperature?
Do you expect the NBTI powerexponent to be larger or smaller if trapping is important?
How does one know that...
http://nanohub.org/resources/16778

ECE 606 Lecture 27: Looking Back and Looking Forward
20 Dec 2012  Online Presentations  Contributor(s): Gerhard Klimeck
http://nanohub.org/resources/16122

ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012  Online Presentations  Contributor(s): Gerhard Klimeck
http://nanohub.org/resources/16055