Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
Ranking is calculated from a formula comprised of user reviews and usage data. Learn more ›
26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic …
A methodology for SPICE-compatible modeling of nanoMOSFETs
17 Nov 2010 | Teaching Materials | Contributor(s): Alba Graciela Avila, David Espejo
An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), …
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
ABACUS: Test for MOSFET Tool
17 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have …
ABACUS—Introduction to Semiconductor Devices
Introduction When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic …
Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device …
Atomistic Simulations of Reliability
01 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently …
Band Structure Lab Demonstration: Bulk Strain
03 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
CMOS-Nano Hybrid Technology: a nanoFPGA-related study
04 Apr 2007 | Online Presentations | Contributor(s): Wei Wang
Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the …
cylindrical geometry for mosfet in PADRE
Closed | Responses: 1
how to define a cylindrical geometry for mosfet in padre?
ECE 539 Report: Study of two-dimensional Shrodinger-Poisson Solver
01 Jun 2009 | Downloads | Contributor(s): Fawad Hassan
We solve the 2-Dimensional Shrodinger-Poisson system of equations using a self consistent scheme (like Gummel Iteration). We study a double gate Silicon Mosfet oriented in the 100 direction using the …
ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities
ECE 606 Lecture 24: MOSFET Non-Idealities
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 27: Looking Back and Looking Forward
20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 35: MOSFET I-V Characteristics I
16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies.