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2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008 | | Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...
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Convergence problem, take smaller steps
Q&A|Closed | Responses: 0
I receive this error when running the MOSFET tool. Any one can suggest a solution
https://nanohub.org/answers/question/1488
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cylindrical geometry for mosfet in PADRE
Q&A|Closed | Responses: 1
how to define a cylindrical geometry for mosfet in padre?
https://nanohub.org/answers/question/422
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How do I derive the 2D electron density used in nano MOSFET calculations?
Q&A|Open | Responses: 1
In nanomos-2.5, the density of charge is obtained by multiplying the square of the wavefunction by a prefactor: with semiclassical method, that prefactor is given by
https://nanohub.org/answers/question/54
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How to see the occupation of electrons with strain
Q&A|Closed | Responses: 1
How do I witness the variation of occupancies of electrons in the 6 conduction band minima’s with the applied strain. Can anyone suggest me the good simulation tool for the same.
https://nanohub.org/answers/question/675
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how to simulate insulator in a GNRFET with matlab?
Q&A|Closed | Responses: 0
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
https://nanohub.org/answers/question/1583
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Is there any free licence drift diffusion device simulator that supports MOS and bipolar devices
Q&A|Open | Responses: 1
A sequel to this question is : Is Bambi simulator still available ??
https://nanohub.org/answers/question/39
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Models for SETs in PSpice
Q&A|Closed | Responses: 0
Hello. I am trying to simulate hybrid circuits (cMOS SET transistors) and I can't find models for SET, anywhere... I only want a SET that can simulate properly along with regular...
https://nanohub.org/answers/question/1399
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Numerical work outs surface potential and capacitance of Mosfets in Matlab
Q&A|Open | Responses: 1
how to work out surface potential and capacitance for Mosfets numerically in matlab?
https://nanohub.org/answers/question/36
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relation between the si thickness and current
Q&A|Open | Responses: 1
i have a question about role of the si thickness in computing of the current. in ultra,thin body mosfet, what relation is there between the si thickness and current?
https://nanohub.org/answers/question/272
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simulation does not give any result
Q&A|Closed | Responses: 0
I simulated a n-type mosfet with following settings:
device type mosfet n-type
gaussian S/D doping density
source/drain length: 50nm
source/drain nodes: 15
channel length: 35 https://nanohub.org/answers/question/771
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transfer characteristic
Q&A|Open | Responses: 2
how the transfer characteristic of a mosfet depends on the channel doping?(theory)
https://nanohub.org/answers/question/31
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What are the emerging trends in device modeling
Q&A|Closed | Responses: 0
What are the emerging trends in device modeling? We have attained sun 45nm regime. what is beyond this? what research can be done further? any idea
https://nanohub.org/answers/question/565
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A Matlab 2D-Poisson-drift-diffusion simulator for semiconductor devices
04 Mar 2024 | | Contributor(s):: Chien-Ting Tung
A Matlab 2D-Poisson-Drift-Diffusion solver for simple MOSFETs. It uses finite difference method, Slotboom variable, and Gummel iteration.Boltzmann statistics and velocity saturation is considered.
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A methodology for SPICE-compatible modeling of nanoMOSFETs
17 Nov 2010 | | Contributor(s):: Alba Graciela Avila, David Espejo
An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his class that is not...
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A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015 | | Contributor(s):: Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...
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ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor devices
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ABACUS MOS Capacitors (Spring 2022)
04 May 2022 | | Contributor(s):: Gerhard Klimeck
In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...
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ABACUS MOS Capacitors (Winter 2021)
08 Dec 2021 | | Contributor(s):: Gerhard Klimeck
In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...
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ABACUS MOSFETs (Spring 2022)
04 May 2022 | | Contributor(s):: Gerhard Klimeck
In the seventh session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOSFET Lab. Students can experiment with the classical scaling of a traditional 2D MOSFET....