
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008   Contributor(s):: Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nanodevice to show the connection explicitly.

Lecture 3A: The Ballistic MOSFET
10 Sep 2008   Contributor(s):: Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture  just a proper mathematical derivation of the approach that was developed...

Lecture 3B: The Ballistic MOSFET
10 Sep 2008   Contributor(s):: Mark Lundstrom
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
10 Sep 2008   Contributor(s):: Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins...

Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008   Contributor(s):: Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.

Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008   Contributor(s):: Mark Lundstrom
No MOSFET is ever fully ballistic  there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...

Lecture 5: Application to StateoftheArt FETs
08 Sep 2008   Contributor(s):: Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.

Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008   Contributor(s):: Mark Lundstrom

2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008   Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottomup perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...

Physics of Nanoscale MOSFETs
26 Aug 2008   Contributor(s):: Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...

Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008   Contributor(s):: Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (driftdiffusion) approach and the meaning of ballistic transport is also included.

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008   Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education

MOSFET  Theoretical Exercises
03 Aug 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
www.eas.asu.edu/~vasileskNSF

MOSFET Exercise
07 Jul 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF

How do I derive the 2D electron density used in nano MOSFET calculations?
Open  Responses: 1
In nanomos2.5, the density of charge is obtained by multiplying the square of the wavefunction by a prefactor: with semiclassical method, that prefactor is given by
http://nanohub.org/answers/question/54

Renaud DAVIOT
__Researcher at [http://inl.cnrs.fr/ INL]__[[BR]]Reconfigurable digital cells with CNT, Nanowires, molecular devices[[BR]]__Teaching at [http://www.cpe.fr/ CPE Lyon] (France)__[[BR]]FPGA, VHDL,...
http://nanohub.org/members/26856

MOSfet Homework Assignment  Role of Dielectric Constant and Thickness
31 Jan 2008   Contributor(s):: David K. Ferry
Use the MOSfet tool on nanoHUB to simulate a nchannel MOSFET with the following parameters:Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),polySi gate, junction depth of 10 nm (20 nodes), and all other parametersat their nominal preset values.Now, change K to 20, and...

Semiconductor Device Education Material
28 Jan 2008   Contributor(s):: Gerhard Klimeck
This page has moved to "a Wiki page format" When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are...

Is there any free licence drift diffusion device simulator that supports MOS and bipolar devices
Open  Responses: 1
A sequel to this question is : Is Bambi simulator still available ??
http://nanohub.org/answers/question/39

Numerical work outs surface potential and capacitance of Mosfets in Matlab
Open  Responses: 1
how to work out surface potential and capacitance for Mosfets numerically in matlab?
http://nanohub.org/answers/question/36