
Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent...
http://nanohub.org/resources/5308

Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
No MOSFET is ever fully ballistic  there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...
http://nanohub.org/resources/5311

Lecture 5: Application to StateoftheArt FETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...
http://nanohub.org/resources/5312

Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008  Online Presentations  Contributor(s): Mark Lundstrom
NCN@Purdue Summer School 2008
National Science Fondation
Intel Corporation
NCN@Purdue Summer School 2008
National Science Fondation
Intel Corporation
http://nanohub.org/resources/5317

2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008  Workshops  Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottomup perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic...
http://nanohub.org/resources/5305

Physics of Nanoscale MOSFETs
26 Aug 2008  Courses  Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of...
http://nanohub.org/resources/5306

Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008  Online Presentations  Contributor(s): Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (driftdiffusion) approach and...
http://nanohub.org/resources/5307

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008  Tools  Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education
http://nanohub.org/resources/abacus

MOSFET  Theoretical Exercises
03 Aug 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
www.eas.asu.edu/~vasileskNSF
http://nanohub.org/resources/5191

MOSFET Exercise
07 Jul 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias...
http://nanohub.org/resources/4906

How do I derive the 2D electron density used in nano MOSFET calculations?
Open  Responses: 1
In nanomos2.5, the density of charge is obtained by multiplying the square of the wavefunction by a prefactor: with semiclassical method, that prefactor is given by
http://nanohub.org/answers/question/54

Renaud DAVIOT
__Researcher at [http://inl.cnrs.fr/ INL]__[[BR]]Reconfigurable digital cells with CNT, Nanowires, molecular devices[[BR]]__Teaching at [http://www.cpe.fr/ CPE Lyon] (France)__[[BR]]FPGA, VHDL,...
http://nanohub.org/members/26856

MOSfet Homework Assignment  Role of Dielectric Constant and Thickness
31 Jan 2008  Teaching Materials  Contributor(s): David K. Ferry
Use the MOSfet tool on nanoHUB to simulate a nchannel MOSFET with the following parameters:
Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),
polySi gate, junction depth...
http://nanohub.org/resources/3948

Semiconductor Device Education Material
28 Jan 2008  Teaching Materials  Contributor(s): Gerhard Klimeck
This page has moved to "a Wiki page format"
When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic...
http://nanohub.org/resources/edu_semi

Is there any free licence drift diffusion device simulator that supports MOS and bipolar devices
Open  Responses: 1
A sequel to this question is : Is Bambi simulator still available ??
http://nanohub.org/answers/question/39

Numerical work outs surface potential and capacitance of Mosfets in Matlab
Open  Responses: 1
how to work out surface potential and capacitance for Mosfets numerically in matlab?
http://nanohub.org/answers/question/36

transfer characteristic
Open  Responses: 2
how the transfer characteristic of a mosfet depends on the channel doping?(theory)
http://nanohub.org/answers/question/31

Simulation of highly idealized, atomic scale MQCA logic circuits
15 Nov 2007  Papers  Contributor(s): Dmitri Nikonov, George Bourianoff
Spintronics logic devices based on majority gates formed by atomiclevel arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by timedependent solution...
http://nanohub.org/resources/3527

David Espejo
Former grad student affiliated with the Microelectronics Center at "Universidad de los Andes" or University of the Andes, Bogota Colombia.
Current interests: HPC for...
http://nanohub.org/members/23702

Electronics From the Bottom Up: topdown/bottomup views of length
17 Aug 2007  Online Presentations  Contributor(s): Muhammad A. Alam
When devices get small stochastic effects become important. Random
dopant effects lead to uncertainties in a MOSFET’s threshold voltage
and gate oxides breakdown is a random process. ...
http://nanohub.org/resources/2974