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Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

All Categories (21-40 of 136)

  1. Alok Ranjan

    http://nanohub.org/members/71877

  2. Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities

    19 Jul 2012 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/14772

  3. Sabbir Ebna Razzaque

    http://nanohub.org/members/67938

  4. Tamer Elzayyat

    http://nanohub.org/members/67780

  5. MOSFET Design Calculations - Step 3

    01 Apr 2012 | Teaching Materials | Contributor(s): Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13675

  6. MOSFET Design Calculations - Step 3 (Instructor Copy)

    01 Apr 2012 | Teaching Materials | Contributor(s): Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13677

  7. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    28 Mar 2012 | Courses | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...

    http://nanohub.org/resources/13613

  8. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    http://nanohub.org/resources/13614

  9. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...

    http://nanohub.org/resources/13612

  10. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it...

    http://nanohub.org/resources/13611

  11. MOSFET Design Simulation I

    07 Mar 2012 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13398

  12. MOSFET Design Simulation I (Instructor Copy)

    07 Mar 2012 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13400

  13. MOSFET Design Calculations - Step 2 (Instructor Copy)

    05 Mar 2012 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13360

  14. MOSFET Design Calculations - Step 2

    05 Mar 2012 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13358

  15. Ashish Kumar

    http://nanohub.org/members/64838

  16. kumar rohit

    http://nanohub.org/members/62042

  17. Silvaco Athena - Part 3

    09 Aug 2011 | Teaching Materials | Contributor(s): Dragica Vasileska

    This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.

    http://nanohub.org/resources/11819

  18. Abdelaali Fargi

    http://nanohub.org/members/56303

  19. MOSFET Lab Exercise: Series Resistance and Transistor Breakdown

    13 Jul 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how...

    http://nanohub.org/resources/11650

  20. MOSFet Learning Materials

    By completing the MOSFET Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to understand a) the operation of MOSFET devices, b)...

    http://nanohub.org/wiki/MOSFETLabPage

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