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Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

All Categories (41-60 of 241)

  1. Onkar Shrinivas Bhende

    http://nanohub.org/members/52322

  2. OMEN Nanowire Homework Problems

    24 Jan 2011 | Teaching Materials | Contributor(s): SungGeun Kim

    OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework...

    http://nanohub.org/resources/10512

  3. MOSFET Lab - Scaling

    03 Jan 2011 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

    The concept of device scaling and the need to control short channel effects is used in this real life problem

    http://nanohub.org/resources/10268

  4. MOSFET Design Calculations - Step 1

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10245

  5. MOSFET Design Calculations - Step 1 (Instructor Copy)

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10252

  6. MOSFET Design Calculations - Step 2

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10258

  7. MOSFET Design Calculations - Step 2 (Instructor Copy)

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10260

  8. How to see the occupation of electrons with strain

    Closed | Responses: 1

    How do I witness the variation of occupancies of electrons in the 6 conduction band minima’s with the applied strain. Can anyone suggest me the good simulation tool for the same.

    http://nanohub.org/answers/question/675

  9. MOSFET Worked out problems 1

    06 Dec 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

    Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

    http://nanohub.org/resources/10128

  10. A methodology for SPICE-compatible modeling of nanoMOSFETs

    17 Nov 2010 | Teaching Materials | Contributor(s): Alba Graciela Avila, David Espejo

    An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation...

    http://nanohub.org/resources/10024

  11. ABACUS: Test for MOSFET Tool

    18 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have...

    http://nanohub.org/resources/9882

  12. Verification of the Validity of the MOSFET Tool

    11 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the...

    http://nanohub.org/resources/9841

  13. Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

    22 Sep 2010 | Online Presentations | Contributor(s): Krishna Shenai

    This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging...

    http://nanohub.org/resources/9343

  14. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors.. Learning Objectives: GNR TFET Simulation pz Tight-Binding Orbital Model 3D...

    http://nanohub.org/resources/9283

  15. Lecture 1b: Nanotransistors - A Bottom Up View

    20 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom

    MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for...

    http://nanohub.org/resources/9344

  16. Atomistic Simulations of Reliability

    06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

    Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have...

    http://nanohub.org/resources/9253

  17. What are the emerging trends in device modeling

    Closed | Responses: 0

    What are the emerging trends in device modeling? We have attained sun 45nm regime. what is beyond this? what research can be done further? any idea

    http://nanohub.org/answers/question/565

  18. Exercise for MOSFET Lab: Device Scaling

    28 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    This exercise explores device scaling and how well devices are designed.

    http://nanohub.org/resources/9221

  19. Threshold voltage in a nanowire MOSFET

    22 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck

    Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface...

    http://nanohub.org/resources/8803

  20. madFETs

    mad-FET introduction The Field-Effect-Transistor has been proposed and implement in many physical systems, materials, and geometries. A multitude of acronyms have developed around these...

    http://nanohub.org/wiki/madFETs

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