
MOSFET Lab Exercise: Series Resistance and Transistor Breakdown
13 Jul 2011  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how...
http://nanohub.org/resources/11650

MOSFet Learning Materials
By completing the MOSFET Lab in ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to understand a) the operation of MOSFET devices, b)...
http://nanohub.org/wiki/MOSFETLabPage

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
11 May 2011  Online Presentations  Contributor(s): Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10...
http://nanohub.org/resources/11249

simulation does not give any result
Closed  Responses: 0
I simulated a ntype mosfet with following settings:
device type mosfet ntype
gaussian S/D doping density
source/drain length: 50nm
source/drain nodes: 15
channel length: 35 http://nanohub.org/answers/question/771

FETToy
14 Feb 2006  Tools  Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic IV characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
http://nanohub.org/resources/fettoy

Onkar Shrinivas Bhende
http://nanohub.org/members/52322

OMEN Nanowire Homework Problems
24 Jan 2011  Teaching Materials  Contributor(s): SungGeun Kim
OMEN Nanowire homework problems: anyone who has gone through the firsttime user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework...
http://nanohub.org/resources/10512

MOSFET Lab  Scaling
03 Jan 2011  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska
The concept of device scaling and the need to control short channel effects is used in this real life problem
http://nanohub.org/resources/10268

MOSFET Design Calculations  Step 1
02 Jan 2011  Teaching Materials  Contributor(s): Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...
http://nanohub.org/resources/10245

MOSFET Design Calculations  Step 1 (Instructor Copy)
02 Jan 2011  Teaching Materials  Contributor(s): Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...
http://nanohub.org/resources/10252

MOSFET Design Calculations  Step 2
02 Jan 2011  Teaching Materials  Contributor(s): Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...
http://nanohub.org/resources/10258

MOSFET Design Calculations  Step 2 (Instructor Copy)
02 Jan 2011  Teaching Materials  Contributor(s): Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...
http://nanohub.org/resources/10260

How to see the occupation of electrons with strain
Closed  Responses: 1
How do I witness the variation of occupancies of electrons in the 6 conduction band minima’s with the applied strain. Can anyone suggest me the good simulation tool for the same.
http://nanohub.org/answers/question/675

MOSFET Worked out problems 1
06 Dec 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.
http://nanohub.org/resources/10128

A methodology for SPICEcompatible modeling of nanoMOSFETs
17 Nov 2010  Teaching Materials  Contributor(s): Alba Graciela Avila, David Espejo
An original SPICEcompatible model for Intel's 45nm HighK MOSFET is presented. It takes into account some QuantumMechanical Effects that occur at small scale like Channel Length Modulation...
http://nanohub.org/resources/10024

ABACUS: Test for MOSFET Tool
18 Oct 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have...
http://nanohub.org/resources/9882

Verification of the Validity of the MOSFET Tool
11 Oct 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on BulkCharge theory. Parasitic resistance is used as a fitting parameter in the...
http://nanohub.org/resources/9841

Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics
22 Sep 2010  Online Presentations  Contributor(s): Krishna Shenai
This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging...
http://nanohub.org/resources/9343

Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
05 Aug 2010  Online Presentations  Contributor(s): Gerhard Klimeck, Mathieu Luisier
This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..
Learning Objectives:
GNR TFET Simulation
pz TightBinding Orbital Model
3D...
http://nanohub.org/resources/9283

Lecture 1b: Nanotransistors  A Bottom Up View
20 Jul 2010  Online Presentations  Contributor(s): Mark Lundstrom
MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for...
http://nanohub.org/resources/9344