Support

Support Options

Submit a Support Ticket

 

Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

All Categories (41-60 of 137)

  1. MOSFet Learning Materials

    By completing the MOSFET Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to understand a) the operation of MOSFET devices, b)...

    http://nanohub.org/wiki/MOSFETLabPage

  2. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    11 May 2011 | Online Presentations | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10...

    http://nanohub.org/resources/11249

  3. simulation does not give any result

    Closed | Responses: 0

    I simulated a n-type mosfet with following settings: device type mosfet n-type gaussian S/D doping density

    source/drain length: 50nm source/drain nodes: 15
    channel length: 35 http://nanohub.org/answers/question/771

  4. FETToy

    14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

    http://nanohub.org/resources/fettoy

  5. Onkar Shrinivas Bhende

    http://nanohub.org/members/52322

  6. OMEN Nanowire Homework Problems

    24 Jan 2011 | Teaching Materials | Contributor(s): SungGeun Kim

    OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework...

    http://nanohub.org/resources/10512

  7. MOSFET Lab - Scaling

    03 Jan 2011 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

    The concept of device scaling and the need to control short channel effects is used in this real life problem

    http://nanohub.org/resources/10268

  8. MOSFET Design Calculations - Step 1

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10245

  9. MOSFET Design Calculations - Step 1 (Instructor Copy)

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10252

  10. MOSFET Design Calculations - Step 2

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10258

  11. MOSFET Design Calculations - Step 2 (Instructor Copy)

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10260

  12. How to see the occupation of electrons with strain

    Closed | Responses: 1

    How do I witness the variation of occupancies of electrons in the 6 conduction band minima’s with the applied strain. Can anyone suggest me the good simulation tool for the same.

    http://nanohub.org/answers/question/675

  13. MOSFET Worked out problems 1

    06 Dec 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

    Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

    http://nanohub.org/resources/10128

  14. A methodology for SPICE-compatible modeling of nanoMOSFETs

    17 Nov 2010 | Teaching Materials | Contributor(s): Alba Graciela Avila, David Espejo

    An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation...

    http://nanohub.org/resources/10024

  15. ABACUS: Test for MOSFET Tool

    18 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have...

    http://nanohub.org/resources/9882

  16. Verification of the Validity of the MOSFET Tool

    11 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the...

    http://nanohub.org/resources/9841

  17. Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

    22 Sep 2010 | Online Presentations | Contributor(s): Krishna Shenai

    This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging...

    http://nanohub.org/resources/9343

  18. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors.. Learning Objectives: GNR TFET Simulation pz Tight-Binding Orbital Model 3D...

    http://nanohub.org/resources/9283

  19. Lecture 1b: Nanotransistors - A Bottom Up View

    20 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom

    MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for...

    http://nanohub.org/resources/9344

  20. Atomistic Simulations of Reliability

    06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

    Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have...

    http://nanohub.org/resources/9253

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.