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Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

All Categories (61-80 of 241)

  1. Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8570

  2. Illinois ECE 440 Solid State Electronic Devices, Lecture 34: MOS Field Effect Transistor (FET)

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8553

  3. Illinois ECE 440 Solid State Electronic Devices, Lecture 35: Short Channel MOSFET and Non-Ideal Behavior

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8557

  4. Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8561

  5. Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8564

  6. Suseendran Jayachandran

    http://nanohub.org/members/41892

  7. Illinois ECE 440: MOS Field-Effect Transistor Homework

    28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed

    This homework covers Output Characteristics and Mobility Model of MOSFETs.

    http://nanohub.org/resources/8268

  8. cylindrical geometry for mosfet in PADRE

    Closed | Responses: 1

    how to define a cylindrical geometry for mosfet in padre?

    http://nanohub.org/answers/question/422

  9. Akash Paharia

    Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...

    http://nanohub.org/members/38550

  10. Tutorial for PADRE Based Simulation Tools

    10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis...

    http://nanohub.org/resources/7223

  11. Exercise for MOSFET Lab: DIBL Effect

    03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.

    http://nanohub.org/resources/7190

  12. Exercise for MOSFET Lab: Long Channel vs. Short Channel Device

    03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska

    In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts...

    http://nanohub.org/resources/7188

  13. MOSFet: First-Time User Guide

    13 Jun 2009 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Benjamin P Haley

    This first-time user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOI-MOSFETs is followed by a tour of the Rappture interface, which notes key inputs...

    http://nanohub.org/resources/6900

  14. Band Structure Lab Demonstration: Bulk Strain

    12 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck

    This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

    http://nanohub.org/resources/6815

  15. MOSFet Demonstration: MOSFET Device Simulation and Analysis

    11 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck, Benjamin P Haley

    This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.

    http://nanohub.org/resources/6830

  16. ECE 539 Report: Study of two-dimensional Shrodinger-Poisson Solver

    01 Jun 2009 | Downloads | Contributor(s): Fawad Hassan

    We solve the 2-Dimensional Shrodinger-Poisson system of equations using a self consistent scheme (like Gummel Iteration). We study a double gate Silicon Mosfet oriented in the 100 direction using...

    http://nanohub.org/resources/6776

  17. ECE 606 Lecture 38: Modern MOSFET

    07 May 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5906

  18. ECE 606 Lecture 40: Looking Back and Looking Forward

    30 Apr 2009 | Online Presentations

    http://nanohub.org/resources/6716

  19. ECE 606 Lecture 36: MOSFET I-V Characteristics II

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5902

  20. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5904

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