Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

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  1. Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

    22 Sep 2010 | Online Presentations | Contributor(s): Krishna Shenai

    This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging...

    http://nanohub.org/resources/9343

  2. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors.. Learning Objectives: GNR TFET Simulation pz Tight-Binding Orbital Model 3D...

    http://nanohub.org/resources/9283

  3. Lecture 1b: Nanotransistors - A Bottom Up View

    20 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom

    MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and...

    http://nanohub.org/resources/9344

  4. Atomistic Simulations of Reliability

    06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

    Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have...

    http://nanohub.org/resources/9253

  5. What are the emerging trends in device modeling

    Closed | Responses: 0

    What are the emerging trends in device modeling? We have attained sun 45nm regime. what is beyond this? what research can be done further? any idea

    http://nanohub.org/answers/question/565

  6. Exercise for MOSFET Lab: Device Scaling

    28 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    This exercise explores device scaling and how well devices are designed.

    http://nanohub.org/resources/9221

  7. Threshold voltage in a nanowire MOSFET

    22 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck

    Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface...

    http://nanohub.org/resources/8803

  8. madFETs

    mad-FET introduction The Field-Effect-Transistor has been proposed and implement in many physical systems, materials, and geometries. A multitude of acronyms have developed around these...

    http://nanohub.org/wiki/madFETs

  9. Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8570

  10. Illinois ECE 440 Solid State Electronic Devices, Lecture 34: MOS Field Effect Transistor (FET)

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8553

  11. Illinois ECE 440 Solid State Electronic Devices, Lecture 35: Short Channel MOSFET and Non-Ideal Behavior

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8557

  12. Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8561

  13. Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8564

  14. Suseendran Jayachandran

    http://nanohub.org/members/41892

  15. Illinois ECE 440: MOS Field-Effect Transistor Homework

    28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed

    This homework covers Output Characteristics and Mobility Model of MOSFETs.

    http://nanohub.org/resources/8268

  16. cylindrical geometry for mosfet in PADRE

    Closed | Responses: 1

    how to define a cylindrical geometry for mosfet in padre?

    http://nanohub.org/answers/question/422

  17. Akash Paharia

    Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...

    http://nanohub.org/members/38550

  18. Tutorial for PADRE Based Simulation Tools

    10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis...

    http://nanohub.org/resources/7223

  19. Exercise for MOSFET Lab: DIBL Effect

    03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.

    http://nanohub.org/resources/7190

  20. Exercise for MOSFET Lab: Long Channel vs. Short Channel Device

    03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska

    In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts...

    http://nanohub.org/resources/7188