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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics
22 Sep 2010 | Online Presentations | Contributor(s): Krishna Shenai
This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging...
Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier
This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..
GNR TFET Simulation
pz Tight-Binding Orbital Model
Lecture 1b: Nanotransistors - A Bottom Up View
20 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom
MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and...
Atomistic Simulations of Reliability
06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have...
What are the emerging trends in device modeling
Closed | Responses: 0
What are the emerging trends in device modeling? We have attained sun 45nm regime. what is beyond this? what research can be done further? any idea
Exercise for MOSFET Lab: Device Scaling
28 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise explores device scaling and how well devices are designed.
Threshold voltage in a nanowire MOSFET
22 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck
Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface...
The Field-Effect-Transistor has been proposed and implement in many physical systems, materials, and geometries. A multitude of acronyms have developed around these...
Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop
Illinois ECE 440 Solid State Electronic Devices, Lecture 34: MOS Field Effect Transistor (FET)
Illinois ECE 440 Solid State Electronic Devices, Lecture 35: Short Channel MOSFET and Non-Ideal Behavior
Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits
Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter
Illinois ECE 440: MOS Field-Effect Transistor Homework
28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed
This homework covers Output Characteristics and Mobility Model of MOSFETs.
cylindrical geometry for mosfet in PADRE
Closed | Responses: 1
how to define a cylindrical geometry for mosfet in padre?
Tutorial for PADRE Based Simulation Tools
10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis...
Exercise for MOSFET Lab: DIBL Effect
03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.
Exercise for MOSFET Lab: Long Channel vs. Short Channel Device
03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska
In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts...