Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

All Categories (81-100 of 141)

  1. Exercise for MOSFET Lab: Long Channel vs. Short Channel Device

    03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska

    In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts...

    http://nanohub.org/resources/7188

  2. MOSFet: First-Time User Guide

    13 Jun 2009 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Benjamin P Haley

    This first-time user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOI-MOSFETs is followed by a tour of the Rappture interface, which notes key inputs...

    http://nanohub.org/resources/6900

  3. Band Structure Lab Demonstration: Bulk Strain

    12 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck

    This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

    http://nanohub.org/resources/6815

  4. MOSFet Demonstration: MOSFET Device Simulation and Analysis

    11 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck, Benjamin P Haley

    This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.

    http://nanohub.org/resources/6830

  5. ECE 539 Report: Study of two-dimensional Shrodinger-Poisson Solver

    01 Jun 2009 | Downloads | Contributor(s): Fawad Hassan

    We solve the 2-Dimensional Shrodinger-Poisson system of equations using a self consistent scheme (like Gummel Iteration). We study a double gate Silicon Mosfet oriented in the 100 direction using...

    http://nanohub.org/resources/6776

  6. ECE 606 Lecture 38: Modern MOSFET

    07 May 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5906

  7. ECE 606 Lecture 40: Looking Back and Looking Forward

    30 Apr 2009 | Online Presentations

    http://nanohub.org/resources/6716

  8. ECE 606 Lecture 36: MOSFET I-V Characteristics II

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5902

  9. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5904

  10. ECE 606 Lecture 37b: Nonideal Effects in MOSFET II

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5826

  11. ECE 606 Lecture 35: MOSFET I-V Characteristics I

    16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5900

  12. relation between the si thickness and current

    Open | Responses: 1

    i have a question about role of the si thickness in computing of the current. in ultra,thin body mosfet, what relation is there between the si thickness and current?

    http://nanohub.org/answers/question/272

  13. MOSCap: First-Time User Guide

    30 Mar 2009 | Teaching Materials | Contributor(s): SungGeun Kim, Benjamin P Haley, Gerhard Klimeck

    This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate...

    http://nanohub.org/resources/6546

  14. OMEN Nanowire

    15 Dec 2008 | Tools | Contributor(s): SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh

    Full-band 3D quantum transport simulation in nanowire structure

    http://nanohub.org/resources/omenwire

  15. ECE 612 Lecture 26: Heterostructure FETs

    10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Introduction, 2) Heterojunction review, 3) Modulation doping, 4) I-V characteristics, 5) Device Structure / Materials, 6) Summary.

    http://nanohub.org/resources/6032

  16. ECE 612 Lecture 18B: CMOS Process Flow

    18 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf. This lecture is a condensed version of the more complete...

    http://nanohub.org/resources/5855

  17. ECE 612 Lecture 18A: CMOS Process Steps

    12 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Unit Process Operations, 2) Process Variations.

    http://nanohub.org/resources/5788

  18. ECE 612 Lecture 8: Scattering Theory of the MOSFET II

    08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

    http://nanohub.org/resources/5368

  19. ECE 612 Lecture 7: Scattering Theory of the MOSFET I

    08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

    http://nanohub.org/resources/5367

  20. Introductory Comments

    29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5502