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Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

All Categories (81-100 of 137)

  1. ECE 606 Lecture 38: Modern MOSFET

    07 May 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5906

  2. ECE 606 Lecture 40: Looking Back and Looking Forward

    30 Apr 2009 | Online Presentations

    http://nanohub.org/resources/6716

  3. ECE 606 Lecture 36: MOSFET I-V Characteristics II

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5902

  4. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5904

  5. ECE 606 Lecture 37b: Nonideal Effects in MOSFET II

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5826

  6. ECE 606 Lecture 35: MOSFET I-V Characteristics I

    16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5900

  7. relation between the si thickness and current

    Open | Responses: 1

    i have a question about role of the si thickness in computing of the current. in ultra,thin body mosfet, what relation is there between the si thickness and current?

    http://nanohub.org/answers/question/272

  8. MOSCap: First-Time User Guide

    30 Mar 2009 | Teaching Materials | Contributor(s): SungGeun Kim, Benjamin P Haley, Gerhard Klimeck

    This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate...

    http://nanohub.org/resources/6546

  9. OMEN Nanowire

    02 Sep 2008 | Tools | Contributor(s): SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck

    Full-band 3D quantum transport simulation in nanowire structure

    http://nanohub.org/resources/omenwire

  10. ECE 612 Lecture 26: Heterostructure FETs

    10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Introduction, 2) Heterojunction review, 3) Modulation doping, 4) I-V characteristics, 5) Device Structure / Materials, 6) Summary.

    http://nanohub.org/resources/6032

  11. ECE 612 Lecture 18B: CMOS Process Flow

    18 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf. This lecture is a condensed version of the more complete...

    http://nanohub.org/resources/5855

  12. ECE 612 Lecture 18A: CMOS Process Steps

    12 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Unit Process Operations, 2) Process Variations.

    http://nanohub.org/resources/5788

  13. ECE 612 Lecture 8: Scattering Theory of the MOSFET II

    08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

    http://nanohub.org/resources/5368

  14. ECE 612 Lecture 7: Scattering Theory of the MOSFET I

    08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

    http://nanohub.org/resources/5367

  15. Introductory Comments

    29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5502

  16. Lecture 7: Connection to the Bottom Up Approach

    23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally...

    http://nanohub.org/resources/5314

  17. Lecture 3A: The Ballistic MOSFET

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...

    http://nanohub.org/resources/5309

  18. Lecture 3B: The Ballistic MOSFET

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

    http://nanohub.org/resources/5310

  19. Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our...

    http://nanohub.org/resources/5207

  20. Lecture 2: Elementary Theory of the Nanoscale MOSFET

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent...

    http://nanohub.org/resources/5308

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