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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
Exercise for MOSFET Lab: DIBL Effect
03 Aug 2009 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.
Exercise for MOSFET Lab: Long Channel vs. Short Channel Device
03 Aug 2009 | Contributor(s):: Dragica Vasileska
In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts to play significant role.
MOSFet: First-Time User Guide
13 Jun 2009 | | Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley
This first-time user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOI-MOSFETs is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs,...
Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009 | | Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
MOSFet Demonstration: MOSFET Device Simulation and Analysis
11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.
ECE 539 Report: Study of two-dimensional Shrodinger-Poisson Solver
01 Jun 2009 | | Contributor(s):: Fawad Hassan
We solve the 2-Dimensional Shrodinger-Poisson system of equations using a self consistent scheme (like Gummel Iteration). We study a double gate Silicon Mosfet oriented in the 100 direction using the above setup. We assume a simple 6-valley bandstructure for Silicon.
ECE 606 Lecture 38: Modern MOSFET
out of 5 stars
07 May 2009 | | Contributor(s):: Muhammad A. Alam
ECE 606 Lecture 40: Looking Back and Looking Forward
30 Apr 2009 |
ECE 606 Lecture 36: MOSFET I-V Characteristics II
28 Apr 2009 | | Contributor(s):: Muhammad A. Alam
ECE 606 Lecture 37a: Nonideal Effects in MOSFET I
ECE 606 Lecture 37b: Nonideal Effects in MOSFET II
ECE 606 Lecture 35: MOSFET I-V Characteristics I
16 Apr 2009 | | Contributor(s):: Muhammad A. Alam
relation between the si thickness and current
Open | Responses: 1
i have a question about role of the si thickness in computing of the current. in ultra,thin body mosfet, what relation is there between the si thickness and current?
MOSCap: First-Time User Guide
30 Mar 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...
02 Sep 2008 | | Contributor(s):: SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh
Full-band 3D quantum transport simulation in nanowire structure
ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.
ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008 | | Contributor(s):: Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.
ECE 612 Lecture 18A: CMOS Process Steps
12 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Unit Process Operations,2) Process Variations.
ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.
ECE 612 Lecture 7: Scattering Theory of the MOSFET I