
ECE 606 Lecture 38: Modern MOSFET
07 May 2009  Online Presentations  Contributor(s): Muhammad A. Alam
http://nanohub.org/resources/5906

ECE 606 Lecture 40: Looking Back and Looking Forward
30 Apr 2009  Online Presentations
http://nanohub.org/resources/6716

ECE 606 Lecture 36: MOSFET IV Characteristics II
28 Apr 2009  Online Presentations  Contributor(s): Muhammad A. Alam
http://nanohub.org/resources/5902

ECE 606 Lecture 37a: Nonideal Effects in MOSFET I
28 Apr 2009  Online Presentations  Contributor(s): Muhammad A. Alam
http://nanohub.org/resources/5904

ECE 606 Lecture 37b: Nonideal Effects in MOSFET II
28 Apr 2009  Online Presentations  Contributor(s): Muhammad A. Alam
http://nanohub.org/resources/5826

ECE 606 Lecture 35: MOSFET IV Characteristics I
16 Apr 2009  Online Presentations  Contributor(s): Muhammad A. Alam
http://nanohub.org/resources/5900

relation between the si thickness and current
Open  Responses: 1
i have a question about role of the si thickness in computing of the current. in ultra,thin body mosfet, what relation is there between the si thickness and current?
http://nanohub.org/answers/question/272

MOSCap: FirstTime User Guide
30 Mar 2009  Teaching Materials  Contributor(s): SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This firsttime user guide provides an introduction to MOSCap. The MOSCap tool simulates the onedimensional (along the growth direction) electrostatics in typical single and dualgate...
http://nanohub.org/resources/6546

OMEN Nanowire
02 Sep 2008  Tools  Contributor(s): SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck
Fullband 3D quantum transport simulation in nanowire structure
http://nanohub.org/resources/omenwire

ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Introduction,
2) Heterojunction review,
3) Modulation doping,
4) IV characteristics,
5) Device Structure / Materials,
6) Summary.
http://nanohub.org/resources/6032

ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.
This lecture is a condensed version of the more complete...
http://nanohub.org/resources/5855

ECE 612 Lecture 18A: CMOS Process Steps
12 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Unit Process Operations,
2) Process Variations.
http://nanohub.org/resources/5788

ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review and introduction,
2) Scattering theory of the MOSFET,
3) Transmission under low VDS,
4) Transmission under high VDS,
5) Discussion,
6) Summary.
http://nanohub.org/resources/5368

ECE 612 Lecture 7: Scattering Theory of the MOSFET I
08 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review and introduction,
2) Scattering theory of the MOSFET,
3) Transmission under low VDS,
4) Transmission under high VDS,
5) Discussion,
6) Summary.
http://nanohub.org/resources/5367

Introductory Comments
29 Sep 2008  Online Presentations  Contributor(s): Muhammad A. Alam
http://nanohub.org/resources/5502

Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally...
http://nanohub.org/resources/5314

Lecture 3A: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...
http://nanohub.org/resources/5309

Lecture 3B: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
http://nanohub.org/resources/5310

Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our...
http://nanohub.org/resources/5207

Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent...
http://nanohub.org/resources/5308