
ECE 606 Lecture 27: Looking Back and Looking Forward
20 Dec 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 22: MOScap Frequence Response/MOSFET IV Characteristics
26 Nov 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 23: MOSFET IV Characteristics/MOSFET NonIdealities
26 Nov 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 24: MOSFET NonIdealities
26 Nov 2012   Contributor(s):: Gerhard Klimeck

MIT VirtualSource Tool
07 Aug 2012   Contributor(s):: Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom
Virtual Source Model for MOSFET compact modeling

ABACUS—Introduction to Semiconductor Devices
When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...
http://nanohub.org/wiki/EduSemiconductor

Alok Ranjan
http://nanohub.org/members/71877

Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities
19 Jul 2012   Contributor(s):: Mark Lundstrom

Sabbir Ebna Razzaque
http://nanohub.org/members/67938

Tamer Elzayyat
http://nanohub.org/members/67780

MOSFET Design Calculations  Step 3
01 Apr 2012   Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 3 (Instructor Copy)
01 Apr 2012   Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
25 Mar 2012   Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Fast and Ultrafast Characterization Methods (Part 1 of 3)
26 Mar 2012   Contributor(s):: Souvik Mahapatra

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Predictive Modeling (Part 3 of 3)
25 Mar 2012   Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

Negative Bias Temperature Instability (NBTI) in pMOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
25 Mar 2012   Contributor(s):: Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

MOSFET Design Simulation I
06 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Simulation I (Instructor Copy)
06 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 2 (Instructor Copy)
03 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...