
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008  Workshops  Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottomup perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic...
http://nanohub.org/resources/5305

cylindrical geometry for mosfet in PADRE
Closed  Responses: 1
how to define a cylindrical geometry for mosfet in padre?
http://nanohub.org/answers/question/422

How do I derive the 2D electron density used in nano MOSFET calculations?
Open  Responses: 1
In nanomos2.5, the density of charge is obtained by multiplying the square of the wavefunction by a prefactor: with semiclassical method, that prefactor is given by
http://nanohub.org/answers/question/54

How to see the occupation of electrons with strain
Closed  Responses: 1
How do I witness the variation of occupancies of electrons in the 6 conduction band minima’s with the applied strain. Can anyone suggest me the good simulation tool for the same.
http://nanohub.org/answers/question/675

Is there any free licence drift diffusion device simulator that supports MOS and bipolar devices
Open  Responses: 1
A sequel to this question is : Is Bambi simulator still available ??
http://nanohub.org/answers/question/39

Models for SETs in PSpice
Closed  Responses: 0
Hello. I am trying to simulate hybrid circuits (cMOS SET transistors) and I can't find models for SET, anywhere... I only want a SET that can simulate properly along with regular...
http://nanohub.org/answers/question/1399

Numerical work outs surface potential and capacitance of Mosfets in Matlab
Open  Responses: 1
how to work out surface potential and capacitance for Mosfets numerically in matlab?
http://nanohub.org/answers/question/36

relation between the si thickness and current
Open  Responses: 1
i have a question about role of the si thickness in computing of the current. in ultra,thin body mosfet, what relation is there between the si thickness and current?
http://nanohub.org/answers/question/272

simulation does not give any result
Closed  Responses: 0
I simulated a ntype mosfet with following settings:
device type mosfet ntype
gaussian S/D doping density
source/drain length: 50nm
source/drain nodes: 15
channel length: 35 http://nanohub.org/answers/question/771

transfer characteristic
Open  Responses: 2
how the transfer characteristic of a mosfet depends on the channel doping?(theory)
http://nanohub.org/answers/question/31

What are the emerging trends in device modeling
Closed  Responses: 0
What are the emerging trends in device modeling? We have attained sun 45nm regime. what is beyond this? what research can be done further? any idea
http://nanohub.org/answers/question/565

A methodology for SPICEcompatible modeling of nanoMOSFETs
17 Nov 2010  Teaching Materials  Contributor(s): Alba Graciela Avila, David Espejo
An original SPICEcompatible model for Intel's 45nm HighK MOSFET is presented. It takes into account some QuantumMechanical Effects that occur at small scale like Channel Length Modulation...
http://nanohub.org/resources/10024

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008  Tools  Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education
http://nanohub.org/resources/abacus

ABACUS: Test for MOSFET Tool
18 Oct 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have...
http://nanohub.org/resources/9882

ABACUS—Introduction to Semiconductor Devices
When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...
http://nanohub.org/wiki/EduSemiconductor

Abdelaali Fargi
http://nanohub.org/members/56303

Akash Paharia
Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...
http://nanohub.org/members/38550

Al Key
Technology refresh
http://nanohub.org/members/89988

Ashish Kumar
http://nanohub.org/members/64838

Atomistic Simulations of Reliability
06 Jul 2010  Teaching Materials  Contributor(s): Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have...
http://nanohub.org/resources/9253