Upcoming reboots on Thursday, October 27th, will cause tool sessions to be lost. Sorry for any inconvenience.
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
0.0 out of 5 stars
26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic...
Convergence problem, take smaller steps
Closed | Responses: 0
I receive this error when running the MOSFET tool. Any one can suggest a solution
cylindrical geometry for mosfet in PADRE
Closed | Responses: 1
how to define a cylindrical geometry for mosfet in padre?
How do I derive the 2D electron density used in nano MOSFET calculations?
Open | Responses: 1
In nanomos-2.5, the density of charge is obtained by multiplying the square of the wavefunction by a prefactor: with semiclassical method, that prefactor is given by
How to see the occupation of electrons with strain
How do I witness the variation of occupancies of electrons in the 6 conduction band minima’s with the applied strain. Can anyone suggest me the good simulation tool for the same.
how to simulate insulator in a GNRFET with matlab?
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
Is there any free licence drift diffusion device simulator that supports MOS and bipolar devices
A sequel to this question is : Is Bambi simulator still available ??
Models for SETs in PSpice
Hello. I am trying to simulate hybrid circuits (cMOS SET transistors) and I can't find models for SET, anywhere... I only want a SET that can simulate properly along with regular...
Numerical work outs surface potential and capacitance of Mosfets in Matlab
how to work out surface potential and capacitance for Mosfets numerically in matlab?
relation between the si thickness and current
i have a question about role of the si thickness in computing of the current. in ultra,thin body mosfet, what relation is there between the si thickness and current?
simulation does not give any result
I simulated a n-type mosfet with following settings:
device type mosfet n-type
gaussian S/D doping density
source/drain length: 50nm
source/drain nodes: 15
channel length: 35 http://nanohub.org/answers/question/771
Open | Responses: 2
how the transfer characteristic of a mosfet depends on the channel doping?(theory)
What are the emerging trends in device modeling
What are the emerging trends in device modeling? We have attained sun 45nm regime. what is beyond this? what research can be done further? any idea
A methodology for SPICE-compatible modeling of nanoMOSFETs
17 Nov 2010 | Teaching Materials | Contributor(s): Alba Graciela Avila, David Espejo
An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation...
A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015 | Online Presentations | Contributor(s): Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
5.0 out of 5 stars
08 Aug 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
ABACUS: Test for MOSFET Tool
18 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have...
ABACUS—Introduction to Semiconductor Devices
When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...