Tags: MOSFET

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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

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  1. nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

    out of 5 stars 

    06 Oct 2006 | | Contributor(s):: Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

    A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space approach that...

  2. Nanoscale MOSFETs: Physics, Simulation and Design

    out of 5 stars 

    26 Oct 2006 | | Contributor(s):: Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer aided...

  3. Nanoscale MOSFETS: Physics, Simulation and Design

    out of 5 stars 

    27 Jun 2013 | | Contributor(s):: Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

  4. Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities

    out of 5 stars 

    19 Jul 2012 | | Contributor(s):: Mark Lundstrom

  5. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    out of 5 stars 

    25 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  6. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    out of 5 stars 

    06 May 2011 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...

  7. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    out of 5 stars 

    26 Mar 2012 | | Contributor(s):: Souvik Mahapatra

  8. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    out of 5 stars 

    25 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  9. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    out of 5 stars 

    25 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

  10. Neilalohith Sharma

    https://nanohub.org/members/257041

  11. OMEN Nanowire

    out of 5 stars 

    02 Sep 2008 | | Contributor(s):: SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh

    Full-band 3D quantum transport simulation in nanowire structure

  12. OMEN Nanowire Homework Problems

    out of 5 stars 

    23 Jan 2011 | | Contributor(s):: SungGeun Kim

    OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.

  13. Onkar Shrinivas Bhende

    https://nanohub.org/members/52322

  14. Perspectives on Ion-Induced Power Device Burnout in Space

    out of 5 stars 

    26 Oct 2023 | | Contributor(s):: Kenneth F. Galloway, Scooter Ball

  15. PETE : Purdue Emerging Technology Evaluator

    out of 5 stars 

    26 Jun 2007 | | Contributor(s):: Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy

    Estimate circuit level performance and power of novel devices

  16. Physics of Nanoscale MOSFETs

    out of 5 stars 

    26 Aug 2008 | | Contributor(s):: Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...

  17. Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up

    out of 5 stars 

    10 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins...

  18. Piaohan Xu

    https://nanohub.org/members/338173

  19. Sep 21 2023

    Recitation Series on nanoHUB Tools for Semiconductor Education: Session Seven - ABACUS Tool Suite and MOSFETs

    We invite you to join the seventh session in our Recitation Series, nanoHUB Tools for Semiconductor Education.The objective of the recitation series is to enable faculty to enhance existing or...

    https://nanohub.org/events/details/2386

  20. Renaud DAVIOT

    __Researcher at [http://inl.cnrs.fr/ INL]__[[BR]]Reconfigurable digital cells with CNT, Nanowires, molecular devices[[BR]]__Teaching at [http://www.cpe.fr/ CPE Lyon] (France)__[[BR]]FPGA, VHDL,...

    https://nanohub.org/members/26856