
Need to hire a nanohub freelancer to model a graphene OFET, vertical transistor  fees MOSFET
Closed  Responses: 0
I need to hire a freelancer to model and predict a FET.
I am not familiar with FETTOY.
You will use a program like FETTOY to help us optimize the design of a FET...
http://nanohub.org/answers/question/2033

A VerilogA Compact Model for Negative Capacitance FET
09 Nov 2017  Compact Models  Contributor(s):
By Muhammad Abdul Wahab^{1}, Muhammad A. Alam^{1}
Purdue University
The NCFET compact model is a semiphysical verilogA model of the negative capacitance transistor. We developed this selfconsistent model with BSIM4/MVS and Landau theory. This model is useful to...
http://nanohub.org/publications/95/?v=5

A VerilogA Compact Model for Negative Capacitance FET
09 Nov 2017  Compact Models  Contributor(s):
By Muhammad Abdul Wahab^{1}, Muhammad A. Alam^{1}
Purdue University
The NCFET compact model is a semiphysical verilogA model of the negative capacitance transistor. We developed this selfconsistent model with BSIM4/MVS and Landau theory. This model is useful to...
http://nanohub.org/publications/95/?v=4

A VerilogA Compact Model for Negative Capacitance FET
10 Mar 2017  Compact Models  Contributor(s):
By Muhammad Abdul Wahab^{1}, Muhammad A. Alam^{1}
Purdue University
The NCFET compact model is a semiphysical verilogA model of the negative capacitance transistor. We developed this selfconsistent model with BSIM4/MVS and Landau theory. This model is useful to...
http://nanohub.org/publications/95/?v=3

Nikolaos Makris
http://nanohub.org/members/160697

A VerilogA Compact Model for Negative Capacitance FET
05 Apr 2016  Compact Models  Contributor(s):
By Muhammad Abdul Wahab^{1}, Muhammad A. Alam^{1}
Purdue University
The NCFET compact model is a semiphysical verilogA model of the negative capacitance transistor. We developed this selfconsistent model with BSIM4/MVS and Landau theory. This model is useful to...
http://nanohub.org/publications/95/?v=2

A VerilogA Compact Model for Negative Capacitance FET
28 Nov 2015  Compact Models  Contributor(s):
By Muhammad Abdul Wahab^{1}, Muhammad A. Alam^{1}
Purdue University
The NCFET compact model is a semiphysical verilogA model of the negative capacitance transistor. We developed this selfconsistent model with BSIM4/MVS and Landau theory. This model is useful to...
http://nanohub.org/publications/95/?v=1

Gaurav Dhiman
http://nanohub.org/members/131673

how to simulate insulator in a GNRFET with matlab?
Closed  Responses: 0
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
http://nanohub.org/answers/question/1583

Stanford VirtualSource Carbon Nanotube FieldEffect Transistors Model
08 Apr 2015  Compact Models  Contributor(s):
By ChiShuen Lee^{1}, H.S. Philip Wong^{1}
Stanford University
The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the...
http://nanohub.org/publications/42/?v=2

Neel Chatterjee
http://nanohub.org/members/118363

Hybrid CMOS/SET models for PSpice?
Closed  Responses: 0
Hello! Can anyone tell me where can I find models for hybrid transistors (CMOS and Sinlgle Electron) for designing circuits in PSpice? I must find them for my homework. Thank you!
http://nanohub.org/answers/question/1404

How exactly PN junction works?
Closed  Responses: 0
I know the conventional explanation that electrons moves from n side and holes from pside etc but i know that holes is nothing but the absence of electron. So i want to know the working of PN...
http://nanohub.org/answers/question/1341

Sabbir Ebna Razzaque
http://nanohub.org/members/67938

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
28 Mar 2012   Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Fast and Ultrafast Characterization Methods (Part 1 of 3)
28 Mar 2012   Contributor(s):: Souvik Mahapatra

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Predictive Modeling (Part 3 of 3)
28 Mar 2012   Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

Negative Bias Temperature Instability (NBTI) in pMOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
28 Mar 2012   Contributor(s):: Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

Hasan Munir Nayfeh
Dr. Hasan M. Nayfeh is a senior engineer at IBM SRDC (East Fishkill, New York). He received his Ph.D. (2003) in Electrical Engineering in the area of strained silicon devices from MIT (Cambridge,...
http://nanohub.org/members/56927

Keerti Kumar Korlapati
http://nanohub.org/members/55518