
how to simulate insulator in a GNRFET with matlab?
Closed  Responses: 0
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
http://nanohub.org/answers/question/1583

Stanford VirtualSource Carbon Nanotube FieldEffect Transistors Model
08 Apr 2015  Compact Models
The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the...
http://nanohub.org/publications/42/?v=2

Neel Chatterjee
http://nanohub.org/members/118363

Hybrid CMOS/SET models for PSpice?
Closed  Responses: 0
Hello! Can anyone tell me where can I find models for hybrid transistors (CMOS and Sinlgle Electron) for designing circuits in PSpice? I must find them for my homework. Thank you!
http://nanohub.org/answers/question/1404

How exactly PN junction works?
Closed  Responses: 0
I know the conventional explanation that electrons moves from n side and holes from pside etc but i know that holes is nothing but the absence of electron. So i want to know the working of...
http://nanohub.org/answers/question/1341

Sabbir Ebna Razzaque
http://nanohub.org/members/67938

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
28 Mar 2012  Courses  Contributor(s): Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...
http://nanohub.org/resources/13613

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Fast and Ultrafast Characterization Methods (Part 1 of 3)
28 Mar 2012  Online Presentations  Contributor(s): Souvik Mahapatra
http://nanohub.org/resources/13614

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Predictive Modeling (Part 3 of 3)
28 Mar 2012  Online Presentations  Contributor(s): Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...
http://nanohub.org/resources/13612

Negative Bias Temperature Instability (NBTI) in pMOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
28 Mar 2012  Online Presentations  Contributor(s): Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it...
http://nanohub.org/resources/13611

Hasan Munir Nayfeh
Dr. Hasan M. Nayfeh is a senior engineer at IBM SRDC (East Fishkill, New York). He received his Ph.D. (2003) in Electrical Engineering in the area of strained silicon devices from MIT (Cambridge,...
http://nanohub.org/members/56927

keerti kumar korlapati
http://nanohub.org/members/55518

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
11 May 2011  Online Presentations  Contributor(s): Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10...
http://nanohub.org/resources/11249

Onkar Shrinivas Bhende
http://nanohub.org/members/52322

MOSFET Lab  Scaling
03 Jan 2011  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska
The concept of device scaling and the need to control short channel effects is used in this real life problem
http://nanohub.org/resources/10268

ABACUS: MOSFET  Diffusion Process
09 Aug 2010  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
The goal of this assignment is to make familiar the students the required doses in the diffusion step of fabrication of semiconductor devices to get certain values of the volume doping densities.
http://nanohub.org/resources/9484

Threshold voltage in a nanowire MOSFET
22 Apr 2010  Animations  Contributor(s): Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck
Threshold voltage in a metal oxide semiconductor fieldeffect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface...
http://nanohub.org/resources/8803

i need detail about nanoscale double gate cmos mosfet
Closed  Responses: 1
to model a cmos double gate mosfet, what are the parameters need to be considered
http://nanohub.org/answers/question/478

How to modify Datta’s 1D Matrix Density Matlab code to simulate a germanium pMOS
Closed  Responses: 0
How would one modify Datta’s 1D Matrix Density Matlab code (shown in Quantum transport:Atom to Transistor) in order to simulate a germanium pMOS (the code shown simulates a static 1D Si...
http://nanohub.org/answers/question/380

Exercise for MOSFET Lab: DIBL Effect
03 Aug 2009  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.
http://nanohub.org/resources/7190