Tags: MOSFET modeling

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  1. A Matlab 2D-Poisson-drift-diffusion simulator for semiconductor devices

    04 Mar 2024 | | Contributor(s):: Chien-Ting Tung

    A Matlab 2D-Poisson-Drift-Diffusion solver for simple MOSFETs. It uses finite difference method, Slotboom variable, and Gummel iteration.Boltzmann statistics and velocity saturation is considered. 

  2. Where can I find an example for the simulation of a standard 4 terminal MOSFET?

    Q&A|Open | Responses: 3

    https://nanohub.org/answers/question/2717

  3. Teakhoon Lim

    https://nanohub.org/members/278747

  4. Need to hire a nanohub freelancer to model a graphene OFET, vertical transistor -- fees MOSFET

    Q&A|Closed | Responses: 2

    I need to hire a freelancer to model and predict a FET.

    I am not familiar with FETTOY.

    You will use a program like FETTOY to help us optimize the design of a FET...

    https://nanohub.org/answers/question/2033

  5. Nikolaos Makris

    https://nanohub.org/members/160697

  6. A Verilog-A Compact Model for Negative Capacitance FET

    28 Nov 2015 | Compact Models | Contributor(s):

    By Muhammad Abdul Wahab1, Muhammad A. Alam1

    Purdue University

    The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to...

    https://nanohub.org/publications/95/?v=1

  7. Gaurav Dhiman

    https://nanohub.org/members/131673

  8. how to simulate insulator in a GNRFET with matlab?

    Q&A|Closed | Responses: 0

    I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...

    https://nanohub.org/answers/question/1583

  9. Neel Chatterjee

    https://nanohub.org/members/118363

  10. Hybrid CMOS/SET models for PSpice?

    Q&A|Closed | Responses: 2

    Hello! Can anyone tell me where can I find models for hybrid transistors (CMOS and Sinlgle Electron) for designing circuits in PSpice? I must find them for my homework. Thank you!

    https://nanohub.org/answers/question/1404

  11. How exactly PN junction works?

    Q&A|Closed | Responses: 0

    I know the conventional explanation that electrons moves from n- side and holes from p-side etc but i know that holes is nothing but the absence of electron. So i want to know the working of P-N...

    https://nanohub.org/answers/question/1341

  12. Sabbir Ebna Razzaque

    https://nanohub.org/members/67938

  13. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    28 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  14. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    28 Mar 2012 | | Contributor(s):: Souvik Mahapatra

  15. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    28 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  16. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    28 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

  17. Bhupesh Bishnoi

    https://www.iitk.ac.in/new/bhupesh-bishnoi

    https://nanohub.org/members/62512

  18. Hasan Munir Nayfeh

    Dr. Hasan M. Nayfeh is a senior engineer at IBM SRDC (East Fishkill, New York). He received his Ph.D. (2003) in Electrical Engineering in the area of strained silicon devices from MIT (Cambridge,...

    https://nanohub.org/members/56927

  19. Keerti Kumar Korlapati

    https://nanohub.org/members/55518

  20. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    11 May 2011 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...