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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Excited State Spectroscopy of a Quantum Dot Molecule
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11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed …
Madhurjya M Borgohain
The Single-Atom Transistor: How it was created and what it may mean for the future
21 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
Professor Gerhard Klimeck will be coming to speak on his research with single atom transistors.
Engineering Disorder in Opto-Electronics
05 Dec 2012 | Online Presentations | Contributor(s): Jacob B. Khurgin
GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency …
Thermoelectric Energy Conversion: Transport, Materials, and Systems
05 Dec 2012 | Online Presentations | Contributor(s): Gang Chen
his talk will start with an introduction to thermoelectric effects, and move on to discuss ways to understand and engineer electron and phonon transport in thermoelectric materials to improve the …
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
nanoHUB-U NT L4.1: The Quasi-Ballistic Nanotransistor - Carrier Scattering in Semiconductors
19 Nov 2012 | Online Presentations | Contributor(s): Mark Lundstrom
Ioannis G. Karafyllidis
Uniform Methodology of Benchmarking Beyond-CMOS Devices
31 Oct 2012 | Online Presentations | Contributor(s): Dmitri Nikonov
Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational …
Energies and Lifetimes with Complex-Scaling
02 Apr 2012 | Tools | Contributor(s): Daniel Lee Whitenack, Adam Wasserman
Calculate the resonance energies and lifetimes of a user-defined potential with a uniform complex-scaling transformation.
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012 | Teaching Materials | Contributor(s): Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is Semiconductor Device …
radhe shyam kumar gupta
A CNTFET-Based Nanowired Induction Two-Way Transducers
05 Sep 2012 | Publications | Contributor(s): Rostyslav Sklyar
A complex of the induction magnetic field two-way nanotransducers of the different physical values for both the external and implantable interfaces in a wide range of arrays are summarized. …
Daniel A. Valencia-Hoyos
Graphene Raman Imaging and Spectroscopy Processing
06 Feb 2012 | Tools | Contributor(s): matias gabriel babenco, Li Tao, deji akin
Raman spectroscopy processing for Graphene growth characterization
Wei Jie Lu
Graduated from Nanyang Technological University, Singapore with 2nd Division (Upper Class) Bachelor Degree from Electrical and Electronics Engineering in 2008. Admitted into Direct PhD research …
nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies.