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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism
out of 5 stars
31 Oct 2006 | | Contributor(s):: POLIZZI ERIC, Supriyo Datta
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using...
Process Lab: Defect-coupled diffusion
09 Oct 2006 | | Contributor(s):: Shuqing (Victor) Cao, yang liu, Peter Griffin
This tool simulates dopant diffusion coupled with point defects.
Process Lab: Concentration-Dependent Diffusion
This modules simulates both the standard diffusion and concentration-dependent diffusion.
Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations
30 Oct 2006 | | Contributor(s):: Magnus Paulsson
Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly used for ballistic conduction but may be extended to include inelastic scattering. In this tutorial...
Why is Nanotechnology Multidisciplinary? A perspective of one EE
19 Oct 2006 | | Contributor(s):: Gerhard Klimeck
The field of nano science and nano-technology covers broad areas of expertise. Classical fields of Physics, Chemistry, Material Science, Electrical/Mechanical/Chemical Engineering all are involved in the "new" field. Nano research and development is therefore multidisciplinary. This presentation...
Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006 | | Contributor(s):: ramesh venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ gate...
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
30 Oct 2006 | | Contributor(s):: , POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...
ECE 612 Lecture 20: MOSFET Leakage
18 Oct 2006 | | Contributor(s):: Mark Lundstrom
Electrical Resistance: an Atomistic View
26 Oct 2006 | | Contributor(s):: Supriyo Datta
This tutorial article presents a “bottom-up” view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arise as we move to bigger conductors. Remark ably enough, no serious quantum mechanics is needed to understand electrical...
Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006 |
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer...
28 Aug 2006 | | Contributor(s):: Mark Lundstrom
Semiconductor device technology has transformed our world with supercomputers, personal computers, cell phones, ipods, and much more that we now take for granted. Moore's Law, posited by Intel co-founder Gordon Moore in 1965, states that the number of transistors (the basic building blocks of...
Integrated Circuit Fabrication Process Simulation
Process Lab: Oxidation Flux
This module simulates the oxidation flux.
Modeling of Nanoscale Devices
19 Oct 2006 | | Contributor(s):: M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introductionto the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanicaland atomistic effects. We first review the basis for the...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | | Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...
A Primer on Quantum Computing
18 Oct 2006 | | Contributor(s):: David D. Nolte
Quantum computers would represent an exponential increase in computing power...if they can be built. This tutorial describes the theoretical background to quantum computing, its potential for several specific applications, and the demanding challenges facing practical implementation. The field...
ECE 612 Lecture 19: Series Resistance
17 Oct 2006 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 18: VT Engineering
ECE 612 Lecture 17: Device Scaling