
A ThreeDimensional Quantum Simulation of Silicon Nanowire Transistors with the EffectiveMass Approximation
30 Oct 2006   Contributor(s):: , POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a threedimensional quantum mechanical simulation...

ECE 612 Lecture 20: MOSFET Leakage
18 Oct 2006   Contributor(s):: Mark Lundstrom

Electrical Resistance: an Atomistic View
26 Oct 2006   Contributor(s):: Supriyo Datta
This tutorial article presents a “bottomup” view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arise as we move to bigger conductors. Remark ably enough, no serious quantum mechanics is needed to understand electrical...

Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006   Contributor(s)::
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer...

Nanoelectronics 101
28 Aug 2006   Contributor(s):: Mark Lundstrom
Semiconductor device technology has transformed our world with supercomputers, personal computers, cell phones, ipods, and much more that we now take for granted. Moore's Law, posited by Intel cofounder Gordon Moore in 1965, states that the number of transistors (the basic building blocks of...

Process Lab:Oxidation
09 Oct 2006   Contributor(s):: Shuqing (Victor) Cao, yang liu, Peter Griffin
Integrated Circuit Fabrication Process Simulation

Process Lab: Oxidation Flux
09 Oct 2006   Contributor(s):: Shuqing (Victor) Cao, yang liu, Peter Griffin
This module simulates the oxidation flux.

Modeling of Nanoscale Devices
19 Oct 2006   Contributor(s):: M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introductionto the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanicaland atomistic effects. We first review the basis for the...

A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006   Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a twodimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the nonequilibrium Green’s function equations selfconsistently with Poisson’s equation and treats the effect of...

A Primer on Quantum Computing
18 Oct 2006   Contributor(s):: David D. Nolte
Quantum computers would represent an exponential increase in computing power...if they can be built. This tutorial describes the theoretical background to quantum computing, its potential for several specific applications, and the demanding challenges facing practical implementation. The field...

ECE 612 Lecture 19: Series Resistance
17 Oct 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 18: VT Engineering
17 Oct 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 17: Device Scaling
17 Oct 2006   Contributor(s):: Mark Lundstrom

The Limits of CMOS Scaling from a PowerConstrained Technology Optimization Perspective
17 Oct 2006   Contributor(s)::
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects that arise at the limits of scaling, and will then turn to an analysis of scaling in the presence of...

ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
02 Oct 2006   Contributor(s):: Mark Lundstrom

Introduction to the Keldysh Nonequilibrium Green Function Technique
06 Oct 2006   Contributor(s)::
Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.The technique is somewhat subtle, and a rigorous treatment would require much more than we have at our disposal, see, for example, the textbookk by Haug and Jauho [1].The...

nanoMOS 2.0: A Two Dimensional Simulator for Quantum Transport in DoubleGate MOSFETs
06 Oct 2006   Contributor(s):: Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of socalled Büttiker probes. The double gate device geometry permits an efficient mode space approach that...

ECE 612 Lecture 16: 2D Electrostatics, Part II
02 Oct 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 15: 2D Electrostatics, Part I
02 Oct 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 14: Effective Mobility
02 Oct 2006   Contributor(s):: Mark Lundstrom