
Multidimensional nanoscale device modeling: the finite element method applied to the nonequilibrium Green's function formalism
31 Oct 2006   Contributor(s):: POLIZZI ERIC, Supriyo Datta
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the NonEquilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using...

Process Lab: Defectcoupled diffusion
09 Oct 2006   Contributor(s):: Shuqing (Victor) Cao, yang liu, Peter Griffin
This tool simulates dopant diffusion coupled with point defects.

Process Lab: ConcentrationDependent Diffusion
09 Oct 2006   Contributor(s):: Shuqing (Victor) Cao, yang liu, Peter Griffin
This modules simulates both the standard diffusion and concentrationdependent diffusion.

Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations
30 Oct 2006   Contributor(s):: Magnus Paulsson
Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly used for ballistic conduction but may be extended to include inelastic scattering. In this tutorial...

Why is Nanotechnology Multidisciplinary? A perspective of one EE
19 Oct 2006   Contributor(s):: Gerhard Klimeck
The field of nano science and nanotechnology covers broad areas of expertise. Classical fields of Physics, Chemistry, Material Science, Electrical/Mechanical/Chemical Engineering all are involved in the "new" field. Nano research and development is therefore multidisciplinary. This presentation...

Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006   Contributor(s):: ramesh venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...

Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006   Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of highκ gate...

A ThreeDimensional Quantum Simulation of Silicon Nanowire Transistors with the EffectiveMass Approximation
30 Oct 2006   Contributor(s):: , POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a threedimensional quantum mechanical simulation...

ECE 612 Lecture 20: MOSFET Leakage
18 Oct 2006   Contributor(s):: Mark Lundstrom

Electrical Resistance: an Atomistic View
26 Oct 2006   Contributor(s):: Supriyo Datta
This tutorial article presents a “bottomup” view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arise as we move to bigger conductors. Remark ably enough, no serious quantum mechanics is needed to understand electrical...

Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006 
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer...

Nanoelectronics 101
28 Aug 2006   Contributor(s):: Mark Lundstrom
Semiconductor device technology has transformed our world with supercomputers, personal computers, cell phones, ipods, and much more that we now take for granted. Moore's Law, posited by Intel cofounder Gordon Moore in 1965, states that the number of transistors (the basic building blocks of...

Process Lab:Oxidation
09 Oct 2006   Contributor(s):: Shuqing (Victor) Cao, yang liu, Peter Griffin
Integrated Circuit Fabrication Process Simulation

Process Lab: Oxidation Flux
09 Oct 2006   Contributor(s):: Shuqing (Victor) Cao, yang liu, Peter Griffin
This module simulates the oxidation flux.

Modeling of Nanoscale Devices
19 Oct 2006   Contributor(s):: M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introductionto the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanicaland atomistic effects. We first review the basis for the...

A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006   Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a twodimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the nonequilibrium Green’s function equations selfconsistently with Poisson’s equation and treats the effect of...

A Primer on Quantum Computing
18 Oct 2006   Contributor(s):: David D. Nolte
Quantum computers would represent an exponential increase in computing power...if they can be built. This tutorial describes the theoretical background to quantum computing, its potential for several specific applications, and the demanding challenges facing practical implementation. The field...

ECE 612 Lecture 19: Series Resistance
17 Oct 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 18: VT Engineering
17 Oct 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 17: Device Scaling
17 Oct 2006   Contributor(s):: Mark Lundstrom