Tags: nanoelectronics

Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

All Categories (1741-1760 of 2015)

  1. The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective

    17 Oct 2006 | Online Presentations | Contributor(s): David J. Frank

    As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects...

    http://nanohub.org/resources/1883

  2. ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances

    16 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1855

  3. Introduction to the Keldysh Nonequilibrium Green Function Technique

    06 Oct 2006 | Papers | Contributor(s): A. P. Jauho

    Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems. The technique is somewhat subtle, and a rigorous treatment would require...

    http://nanohub.org/resources/1877

  4. nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

    06 Oct 2006 | Papers | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

    A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of...

    http://nanohub.org/resources/1875

  5. ECE 612 Lecture 16: 2D Electrostatics, Part II

    02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1865

  6. ECE 612 Lecture 15: 2D Electrostatics, Part I

    02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1861

  7. ECE 612 Lecture 14: Effective Mobility

    02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1858

  8. Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches

    28 Sep 2006 | Papers | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic

    In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-...

    http://nanohub.org/resources/1835

  9. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Sep 2006 | Papers | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them,...

    http://nanohub.org/resources/1833

  10. ECE 612 Lecture 12: Subthreshold Conduction

    25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1823

  11. ECE 612 Lecture 10: The Ballistic MOSFET

    25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1794

  12. ECE 612 Lecture 11: The Quasi-ballistic MOSFET

    25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1797

  13. ECE 612 Lecture 8: MOSFET IV, Part II

    25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1786

  14. Nanoscale Device Modeling: From MOSFETs to Molecules

    21 Sep 2006 | Papers | Contributor(s): Prashant Subhash Damle

    This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices. As convetional metal oxide semiconductor devices shrink below the one hundred...

    http://nanohub.org/resources/1816

  15. Towards Multi-Scale Modeling of Carbon Nanotube Transistors

    21 Sep 2006 | Papers | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram

    Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we...

    http://nanohub.org/resources/1818

  16. Quantum Transport for Nanostructures

    17 Sep 2006 | Papers | Contributor(s): Mathieu Luisier

    Nonequilibrium Green's function techniques, initiated by Schwinger and Kadanoff and Baym allow ones to study the time evolution of a many-particle quantum sys- tem. Knowing the 1-particle...

    http://nanohub.org/resources/1792

  17. ECE 612 Lecture 7: MOSFET IV, Part I

    12 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1783

  18. ECE 612 Lecture 6: Quantum Mechanical Effects

    12 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1770

  19. ECE 612 Lecture 9: MOSFET IV, Part III

    12 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1789

  20. ECE 612 Lecture 5: Poly Si Gate MOS Capacitors

    08 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1767